American Conference on Molecular Beam Epitaxy

Wednesday, October 18, 2000 — Early Morning (8:20-10:20)

Session 8: Devices II — Chair: G. W. Wicks

08:20	8-1 Metamorphic Heterojunction Bipolar Transistors and P-I-N Photodiodes on GaAs Substrates Prepared by Molecular Beam Epitaxy (page 93) W. E. Hoke, P. J. Lemonias, T. D. Kennedy, E. K. Tong, A. Torabi, J. –H. Jang^1, G. Cueva^1, D. C. Dumka^1, I. Adesida^1; Raytheon RF Components; ^1University of Illinois
08:40	8-2 Strain Relaxation and Dislocation Filtering in Metamorphic HEMT Structures Grown on GaAs Substrates (page 95) D. Lubvshev, W. K. Liu, T. R. Stewart, A. B. Cornfeld, X.-M. Fang, X. Xu^1, P. Specht^1, C. Kisielowski^1, M. S. Goorsky^2, J. Mirecki-Millunchick^3, C. S. Whelan^4W. E. Hoke^4, P. F. Marsh^4, S. P. Svensson^5; IQE Inc.; ^1Lawrence Berkeley National Laboratory; ^2University of California at Los Angeles; ^3University of Michigan; ^4Raytheon Microelectronics Center; ^5Army Research Laboratory
09:00	8-3 Mobility Enhancement by Reduced Remote Impurity Scattering in a Pseudomorphic In0.7Ga0.9As/In0.52Al0.48As QW-HEMT Structure with (411)A Super-Flat Interfaces Grown by MBE (page 97) I. Watanabe, K. Kanzaki, T. Aoki, T. Kitada, S. Shimomura, S. Hiyamizu; Osaka University
09:20	8-4 Molecular Beam Epitaxial Growth and Characterization of Strain Compensated Al0.3In0.7P/InP/ Al0.3In0.7P Metamorphic/Pseudomorphic HEMTs on GaAs Substrates (page 98) W. E. Hoke, P. J. Lemonias, T. D. Kennedy, A. Torabi, E. K. Tong; Raytheon RF Components
09:40	Optimizing InGaAs-InAlAs HEMTs for Operation at Frequencies > 150 GHz (page 100) E. Skuras, G. Pennelli, A. R. Long, C. R. Stanley; University of Glasgow
10:00	8-6 Fabrication of a GaP/Al-Oxide Distributed Bragg Reflector for the Visible Spectrum (page 102) G. W. Pickrell, H. C. Lin, K. L. Chang, K. C. Hsieh, K. Y. Cheng; University of Illinois
10:20–10:40		Coffee Break

Wednesday, October 18, 2000 — Late Morning (10:40-12:20)

Session 9: Growth Issues — Chair: W. D. Goodhue

10:40	9-1 Combined Silicon, Beryllium and Carbon Tetrabromide Single-Port Dopant Source for MBE (page 104) N. T. Moshegov, C. D. Nordquist, W. Z. Cai, T. S. Mayer, D. I. Lubyshey^1, D. L. Miller; Pennsylvania State University; ^1IQE
11:00	9-2 Dissociation of As4 Molecules During Molecular Beam Epitaxy of GaAsP on (n11)A and (n11)B GaAs Substrates (page 106) Y. Tatsuoka, M. Uenura, T. Kitada, S. Shimomura, S. Hiyamizu; Osaka University
11:20	9-3 Misfit Dislocation Density Reduction of InP-Based Pseudomorphic High Electron Mobility Structures (page 107) M. Naidenkova, R. Hsing, M. Goorsky, R. Sandhu, P. Chin, M. Wojtowicz, T. Block; UCLA; TRW Space and Electronics Division
11:40	9-4 New Interface Roughness Characterization of (411)A N-AIGaAs/In0.1Ga0.9As/Al0.23Ga0.77As Pseudomorphic Modulation Doped Quantum Wells (page 109) N. Saka, T. Hotta, S. Shimomura, T. Kitada, and S Hiyamizu; Osaka University
12:00	9-5 Improved Interface Abruptness in Pseudomorphic InGaAs/AIGaAs Quantum Well with (411)A Super-Flat Interfaces Grown by Molecular Beam Epitaxy (page 111) T. Kitada, K. Nii, T. Hiraoka, S. Shimomura, S. Hiyamizu; Osaka University
12:20–13:40		Lunch Break

Wednesday, October 17, 2000 — Mid-Afternoon (13:40-15:20)

Session 10: In-Situ Monitoring — Chair: D. Chow

13:40	10-1 Metastability of InGaAs/GaAs Probed by In Situ Optical Stress Sensor (page 113) R. Beresford, K. Tetz, J. Yin, M. Ujue Gonzalez, E. Chason; Brown University
14:00	10-2 Optical and Structural Characterization of In-Situ Buried Multiquantum Well Structures (page 114) M. López-López, A. Perez-Centeno, M. Melendez-Lira^1, M. Tamura, T. Ishikawa^1; Centro de Investigacion y de Estudios Avanzodos del IPN; ^1Optoelectronics Technology Research Laboratory
14:20	10-3 In Situ, Real-Time Pseudodielectric Function and Terahertz Device Performance of Low-Temperature-Grown GaAs (page 116) Donald A. Gajewski, Jonathan E. Guyer, Jeff Hale^1, Joseph G. Pellegrino; National Institute of Standards and Technology; ^1J. A. Woollam Co.
14:40	10-4 In-Situ monitoring of MBE-grown Hg1-xCdxTe by Fourier Transform Infrared Spectroscopy (page 117) G. Badano, M. Daragelia, S. Sivananthan; University of Illinois at Chicago
15:00	10-5 Growth of HgCdTe for Long Wavelength Infrared Detectors Using Automated Control from Spectroscopic Ellipsometry Measurements (page 118) Jamie Phillips, Dennis Edwall, Don Lee, Jose Arias; Rockwell Science Center

NOTES



1. Twin Palms Hotel

2. Holiday Inn

3. Travelodge

4. Comfort Inn and Suites

5. Tempe Mission Palms