American Conference on Molecular Beam Epitaxy

Office of the President

PO Box 872203, TEMPE, AZ 85287-2203

[phone] FAX: [phone]

Location

The 19th North American Conference on Molecular Beam Epitaxy will take place in the Memorial Union on the Main Campus of Arizona State University in Tempe, AZ, October 15-18, 2000. Arizona State University’s Main Campus is located in the heart of Tempe and is part of a fast-growing metropolis offering a number of significant cultural and sporting events.

Parking

40 spaces are reserved in parking structure #1 for the NA-MBE conference. Parking structure #1 is on Apache Blvd. and College Ave.—100m south of the Memorial Union. (See campus map on back cover)

Cost to park on campus: $5 per day, payable at the parking lot. Be sure to tell the attendant you are attending the NA-MBE so they can direct you to the reserved spaces.

Please be aware that campus parking is strictly regulated.

Registration Information

Conference registration will be open in the Arizona Room in the Memorial Union during the following hours:

 Sunday, October 15 16:00-18:00

 Monday, October 16 08:00-17:00

 Tuesday, October 17 08:00-12:00

A welcoming reception will be in Arizona Room 207 in the Memorial Union, from 17:20-19:20, Sunday, October 15.

Registration Fees

	prior to Sept 15^th	after Sept 15^th
regular participant	$295	$395
student participant	$135	$195

The registration fee includes conference registration, the conference program, all scientific proceedings, and one invitation to the banquet. Additional banquet tickets ($40 each) may be purchased at the registration desk, no later than Monday, October 16.

Internet Access
A number of computers with Internet access will be available for conference participants during regular conference hours. These computers will be in the Memorial Union’s Coconino Room 224.

Accommodations

The hotels listed below held a limited number of rooms at special conference rates for reservations made by September 14, 2000. Reservations after that date are accepted on space and rate availability. Contact the hotels directly to make your reservations. Be sure to identify yourself as attending the Molecular Beam Epitaxy conference to receive the reduced rate (if still available). You must provide a credit card number or payment of the first night's lodging to guarantee your reservation and receive a confirmation. The hotels are within one to three blocks of the campus conference center. (See map inside back cover.) Rates do not include 9.97% sales and bed taxes. The Twin Palms Hotel is within easy walking distance of the Memorial Union. There will be a free Conference bus available for participants staying in any of the other hotels.

Twin Palms Hotel ($79.00 single/double)

225 E. Apache Blvd.

Tempe, AZ 85281

Phone: [phone]

Fax: [phone]
Tempe Mission Palms (TMP) ($139.00 single/double)

60 E. 5th St.

Tempe, AZ 85281

Phone: [phone]

Fax: [phone]
Holiday Inn ($107.10 single/double)

915 E. Apache Blvd.

Tempe, AZ 85281

Phone: [phone] or [phone]

Fax: [phone]
Travelodge ($79.00 single/double)

1005 E. Apache Blvd.

Tempe, AZ 85281

Phone: [phone] or [phone]

Fax: [phone]
Comfort Inn and Suites ($79.00 single/double)

1031 E. Apache Blvd.

Tempe, AZ 85281

Phone: [phone] or [phone]

Fax [phone]

Conference Bus Schedule

Route 1: ASU conference site (Lemon & College) to Holiday Inn, Travelodge, Comfort Inn and Suites

Route 2: ASU conference site (Lemon & College) to Tempe Mission Palms

Sunday, October 15, 2000

Route 1 Afternoon bus leaves at:

Holiday Inn

15:40

16:10

16:40

17:10

17:40

18:10

18:40

19:10

19:40

20:10

Travelodge

15:45

16:15

16:45

17:15

17:45

18:15

18:45

19:15

19:45

20:15

Comfort Inn

15:50

16:20

16:50

17:20

17:50

18:20

18:50

19:20

19:50

20:20

ASU

16:00

16:30

17:00

17:30

18:00

18:30

19:00

19:30

20:00

Route 2 Afternoon bus leaves at:

Mission Palms

15:40

16:10

16:40

17:10

17:40

18:10

18:40

19:10

19:40

20:10

ASU

16:00

16:30

17:00

17:30

18:00

18:30

19:00

19:30

20:00

Monday, October 16, 2000

Route 1 Morning bus leaves at:

Holiday Inn

07:00

07:30

08:00

08:30

09:00

09:30

Travelodge

07:05

07:35

08:05

08:35

09:05

09:35

Comfort Inn

07:10

07:40

08:10

08:40

09:10

09:40

ASU

07:20

07:50

08:20

08:50

09:20

09:50

Route 1 Afternoon bus leaves at:

ASU

18:00

18:30

19:00

19:30

20:00

20:30

Holiday Inn

18:10

18:40

19:10

19:40

20:10

20:40

Travelodge

18:15

18:45

19:15

19:45

20:15

20:45

Comfort Inn

18:20

18:50

19:20

19:50

20:20

20:50

Route 2 Morning bus leaves at:

Mission Palms

07:00

07:30

08:00

08:30

09:00

09:30

ASU

07:20

07:50

08:20

08:50

09:20

09:50

Route 2 Afternoon bus leaves at:

ASU

18:00

18:30

19:00

19:30

20:00

20:30

Mission Palms

18:20

18:50

19:20

19:50

20:20

20:50

Tuesday, October 17, 2000

Route 1 Morning bus leaves at:

Holiday Inn

07:00

07:30

08:00

08:30

09:00

09:30

Travelodge

07:05

07:35

08:05

08:35

09:05

09:35

Comfort Inn

07:10

07:40

08:10

08:40

09:10

09:40

ASU

07:20

07:50

08:20

08:50

09:20

09:50

Route 1 Afternoon bus leaves at:

ASU

17:00

17:30

18:00

18:30

19:00

19:30

Holiday Inn

17:10

17:40

18:10

18:40

19:10

19:40

Travelodge

17:15

17:45

18:15

18:45

19:15

19:45

Comfort Inn

17:20

17:50

18:20

18:50

19:20

19:50

Route 2 Morning bus leaves at:

Mission Palms

07:00

07:30

08:00

08:30

09:00

09:30

ASU

07:20

07:50

08:20

08:50

09:20

09:50

Route 2 (To banquet) 3 afternoon buses at each time

ASU

17:20

17:40

18:00

18:20

18:40

Mission Palms

17:30

17:50

18:10

18:30

18:50

Route 2 (After banquet) 2 evening buses at each time

Mission Palms

21:00

21:40

22:20

23:00

Holiday Inn

21:15

21:55

22:35

23:15

Travelodge

21:20

22:00

22:40

23:20

Comfort Inn

21:25

22:05

22:45

23:25

Wednesday, October 18, 2000

Route 1 Morning bus leaves at:

Holiday Inn

07:00

07:30

08:00

08:30

09:00

09:30

Travelodge

07:05

07:35

08:05

08:35

09:05

09:35

Comfort Inn

07:10

07:40

08:10

08:40

09:10

09:40

ASU

07:20

07:50

08:20

08:50

09:20

09:50

Route 1 Afternoon bus leaves at:

ASU

15:30

16:00

16:30

17:00

17:30

18:00

Holiday Inn

15:40

16:10

16:40

17:10

17:40

18:10

Travelodge

15:45

16:15

16:45

17:15

17:45

18:15

Comfort Inn

15:50

16:20

16:50

17:20

17:50

18:20

Route 2 Morning bus leaves at:

Mission Palms

07:00

07:30

08:00

08:30

09:00

09:30

ASU

07:20

07:50

08:20

08:50

09:20

09:50

Route 2 Afternoon bus leaves at:

ASU

15:30

16:00

16:30

17:00

17:30

18:00

Mission Palms

15:50

16:20

16:50

17:20

17:50

18:20

Conference Committee

Conference Chair Yong-Hang Zhang Arizona State University Dept. of Electrical Engineering Box 875706 Tempe, AZ 85226-5706 Tel: [phone] Fax: [phone] Email: [e-mail]	Organizing Chair Shane Johnson Arizona State University Center for Solid State Electronics Research Box 876206 Tempe, AZ 85287-6206 Tel: [phone] Fax: [phone] Email: [e-mail]
Program Chair George Turner MIT Lincoln Laboratory 244 Wood Street Lexington, MA 02420 Tel: [phone] Fax: [phone] Email: [e-mail]	Proceedings Editor Chanh Nguyen HRL Laboratories 3011 Malibu Canyon Road Malibu, CA 90265-4799 Tel: [phone] Fax: [phone] Email: [e-mail]
Program Committee J. Baillargeon P. Chin D. Chow W. D. Goodhue T. C. Hasenberg W. Hoke D. L. Miller J. Mirecki-Millunchick S. Sivananthan J. Speck A. J. SpringThorpe M. Tamargo C. Tu Y.-H. Xie	Advisory Board P. Bhattacharya K. Y. Cheng A. Y. Cho W. D. Goodhue J. S. Harris W. Hoke D. L. Miller A. J. SpringThorpe C. Tu G. Turner K. L. Wang Z. R. Wasilewski G. W. Wicks Y.-H. Zhang

Organizing Committee

M. Beaudoin

R. Droopad

R. Tsui
Social Events

Conference Hike

Sunday, October 15

08:00—15:00

Engineering Research Center (ERC)

Welcoming Reception

Sunday, October 15

Memorial Union—Arizona 207

17:20—19:20

Social Break and Rump Session

Monday, October 16

Memorial Union—Arizona 207

17:00—19:00

Social Hour

Tuesday, October 17

17:40—18:40

Terrace, TMP** Hotel

Banquet with Wine

Tuesday, October 17

Terrace, TMP** Hotel

18:40—20:00

Entertainment (Yellow Bird Productions)

Tuesday, October 17

Terrace, TMP** Hotel

20:00—20:40

Remarks and Awards

Tuesday, October 17

Terrace, TMP** Hotel

20:40—21:00

**Tempe Mission Palms

Appreciation

The Conference Committee would like to thank ASU, the College of Engineering and Applied Sciences, the Center for Solid State Electronic Research (CSSER), the Electrical Engineering Dept., the Center for Professional Development, the Memorial Union, all vendors and all corporate participants for their support of the 19^th North American Conference on Molecular Beam Epitaxy.

Conference Exhibitors
Accent Semiconductor Technologies, Inc. Lehighton Electronics, Inc.

ADDON/EpiSoft (ARS Associates) NIMTEC Inc.

Advanced Ceramics Corp. Performance Materials, Inc.

American XTAL Technology Riber

Applied Epi SPECS USA, Inc.

Bede Scientific, Inc. Sumitomo Electric

DCA Instruments SVT Associates, Inc.

El Dorado Sol, Ltd. United Mineral & Chemical Corp.

EPIR, Ltd. Vacuum Barrier Corporation

GEO Gallium Varian Vacuum Technologies

InPact Company VBS Industries

k-Space Associates, Inc. VG Semicon

Kurt J. Lesker Company Wafer Technology Ltd.

Conference Event Sponsors
Wafer Technology Ltd. (Conference Bags)

United Mineral & Chemical Corp. (Social Hour)

Riber (Two Lunches)

Philips Analytical (Breakfast)

NIMTEC Inc. (Tee-Shirts)

IQE Inc. (Social Break, Rump Session)

InPact Company (Welcoming Reception)

DCA Instruments (Banquet and Wine)

Applied Epi (Tee-Shirts, Bus Service)

American XTAL Technology (Breakfast, Lunch)

Advanced Ceramics Corp. (Coffee Break)


About the Sponsors
The American Vacuum Society is a nonprofit organization that promotes communication, dissemination of knowledge, recommended practices, research, and education in the use of vacuum and other controlled environments to develop new materials, process technology, devices, and related understanding of material properties for the betterment of humanity. The AVS is comprised of 8 technical divisions, 4 technical groups, 20 local-area chapters and about 6000 members worldwide. The Society provides stimulating symposia, short courses, and educational outreach both at the national and local levels.

Web site: www.vacuum.org

The Center for Solid State Electronics Research (CSSER) was established in 1981 during the first phase of the Engineering Excellence Program at Arizona State University. The vision was to achieve nothing less than national leadership in the crucial area of solid state electronics. High technology now directly or indirectly supports one out of every five jobs in Arizona. The Center has exhibited strong and steady growth since those days and currently provides resources and infrastructure for research and education in solid state electronics in the form of 30 laboratories and support areas covering more than 30,000 sq. ft., including a Class-100 Cleanroom administered and maintained by a complement of 10 staff and 4 student workers.

Today, CSSER has more than 30 active faculty members, 10 post-doctoral researchers and 75 students drawn from various disciplines, including electrical engineering, chemical engineering, bioengineering, materials science, mechanical engineering and industrial engineering. The microelectronics research is focussed in five main cross-disciplinary efforts: Nanostructures; Molecular Beam Epitaxy (MBE) and Optoelectronics; Materials and Process Fundamentals; Low Power Electronics; and Focused Ion Beam research.

Web site: http://ceaspub.eas.asu.edu/csser/
The Center for Professional Development sponsors continuing education programs for engineers, scientists and technical managers. The Center uses advanced educational and telecommunication technology to deliver high quality, career-long education to the job site. The University is a member of the National Technological University (NTU) and the Association for the Media-based Continuing Education for Engineers (AMCEE).

Web site: http://www.eas.asu.edu/cpd/

Arizona State University is one of only nine Research 1 institutions in the nation, joining such prestigious universities as MIT and Stanford in the forefront of engineering research. A recent U.S. News & World Report ranking of graduate schools placed ASU’s School of Engineering in the 49^th position in the country and listed the Industrial/Manufacturing Division in the 18^th spot.


Program Schedule*

*The number in parentheses following the title of the presentation is the page number on which the abstract appears in this booklet.

Monday, October 16, 2000 — Early Morning (8:20-10:20)

08:20–08:40

Opening Remarks (P. Crouch, Y.-H. Zhang, G. Turner)

Session 1: Devices-Nitrides — Chair: C. Nguyen

08:40	1-1 Production of AlGaN/GaN High Electron Mobility Transistor Structures by Molecular Beam Epitaxy (page 1) M. Micovic, P. Hashimoto, P. Janke, L. McCray, W. H. Wong, C. Nguyen; HRL Laboratories LLC
09:00	1-2 MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength Opto-Electronics (page 2) S. G. Spruytte, M. C. Larson^1, C. W. Coldren, V. A. Sabnis, J. S. Harris; Stanford University; ^1Lawrence Livermore National Laboratory
09:20	1-3 MBE Growth of Ga(In)NAs/GaAs Heterostructures for Photodiodes (page 4) D. W. Gotthold, S. Govindaraju, G. Kinsey, A. L. Holmes, Jr., J. C. Campbell; University of Texas at Austin
09:40	1-4 RF-MBE Growth of III-Nitrides for Micro Sensor Applications (page 6) D. Starikov, E. Kim, C. Bonney, J. -W. Um, A. Bensaoula; SVEC University of Houston
10:00	1-5 AlxGa1-xSbAs Lattice-Matched to InP for InAlAs/InGaAs HEMTs (page 8) W. Z Cai, N. T. Moshegov, T. S. Mayer and D. L. Miller; Pennsylvania State University
10:20–10:40		Coffee Break

Monday, October 16, 2000 — Late Morning (10:40-12:20)

Session 2: Nitrides — Chair: L. Pfeiffer

10:40	2-1 Growth and Characterization of GaN/AlGaN Multiple Quantum Wells for Near-infrared Intersubband Transitions (page 11) H. M. Ng, C. Gmachl, S. N. G. Chu, A. Y. Cho, R. L. Forrest^1, E. D. Meserole^1, M. S. Goorsky^*; Lucent Technologies; ^1University of California, Los Angeles
11:00	2-2 Growth of High Mobility AlGaN/GaN Heterostructures by Molecular Beam Epitaxy on GaN Templates Prepared by Hydride Vapor Phase Epitaxy (page 13) Michael Manfra, Loren Pfeiffer, Kirk Baldwin, David Lang, Julia Hsu, Kenneth West, Richard J. Molnar^1; Lucent Technologies; ^1Massachusetts Institute of Technology, Lincoln Laboratory
11:20	2-3 Optical Spectroscopy of High-Mobility AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy (page 14) B. J. Skromme, G. L. Martinez, I. P. Smorchkova^1, C.R.Elsass1^*, B. Heying^1, U. K. Mishra^1, J. S. Speck^1; Arizona State University; ^1University of California, Santa Barbara
11:40	2-4 Gas Source Molecular Beam Epitaxy of High Quality AlxGa1-xN (0 x 1) on Si(111) (page 15) S. Nikishin, V. Kuryatkov, C. Jin, G. Kipshidze, K. Choi, Iu. Gherasoiu, L. Grave de Peralta, A. Zubrilov^1, K. Copeland, T. Prokofyeva, M. Seon, M. Holtz, H. Temkin; Texas Tech University; ^1Ioffe Physical-Technical Institute
12:00	2-5 Crack Formation in GaN Grown on Silicon by MBE (page 16) G. W. Wicks, R. Jothilingam, M. W. Koch, J. B. Posthill^1; University of Rochester; ^1Research Triangle Institute
12:20–13:40		Lunch Break

Monday, October 16, 2000 — Early Afternoon (13:40-15:00)

Session 3: Nitride Alloys — Chair: C. W. Tu

13:40	3-1 Band Lineup of GaInNP/GaAs (page 17) Y. G. Hong and C. W. Tu; University of California, San Diego
14:00	3-2 Dilute GaNxAs1-x Grown by MBE Using a Novel RF Plasma Source (page 18) M. Adamcyk, S. Tixier, B. J. Ruck, J. H. Schmid, W. N. Hardy, T. Tiedje, V. Fink^1, M. Jeffries^1, D. Karaiskaj^1 K. Kavanagh^1, M. Thewalt^1; University of British Columbia; ^1Simon Fraser University
14:20	3-3 Growth and Characterization of GaInNAs/GaAs Multiquantum Wells(page 19) P. Gilet, L. Grenouillet^1, P. Duvaut, P. Ballet, G. Rolland, C. Vannuffel, A. Million; LETI/CEA-G-DOPT; ^1LPM-INSA (UMR-CNRS-5511)
14:40	3-4 Antimony in GaN Grown by Molecular Beam Epitaxy (page 20) C. W. Pei, B. Turk, J. B. Heroux, W. I. Wang; Columbia University
15:00–15:20		Coffee Break

Monday, October 16, 2000 — Late-Afternoon (15:20-17:00)

Session 4: Novel Materials — Chair: R. Beresford

15:20	4-1 ZnO Films on GaN: Band Offset and Control of Polarity (page 21) S. K. Hong, T. Hanada, H. Makino, H. J. Ko, Y. Chen, T. Yao, A. Tanaka, H. Sasaki, S. Sato, D. Imai^1, M. Shinohara^1; Tohoku University; ^1Shimadzu Co.
15:40	4-2 Interfaces and Defects in Epitaxial ZnO Films on (01-12) LiTaO3 Grown by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy (page 24) S.-H. Lim and D. Shindo; Tohoku University
16:00	4-3 New Phase Formation of Gd2O3 Films on GaAs (100) (page 23) A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, J. J. Krajewski, N. Kopylov, C. Steiner^1 B. Bolliger^1, M. Erbudak^1; Lucent Technologies; ^1Laboratorium fur Festkorperphysik, ETH
16:20	4-4 Growth and Characterization of MnAs/ZnSe Ferromagnet/Semiconductor Hybrid Heterostructures (page 26) S. H. Chun, J. J. Berry, K. C. Ku, N. Samarth, I. Malajovich^1, D. D. Awschalom^1, L. Chen^1 and J. Speck^1; Pennsylvania State University; ^1University of California, Santa Barbara
16:40	4-5 MBE Growth and Luminescence Properties of Nd^3+ Doped LaF3/CaF2 Thin Films (page 27) X. Zhang, E. Daran^1, C. Serrano^1, K. Pita, C. H. Kam, Y. L. Lam; Nanyang Technological University; ^1Laboratorire d’ Analyse et d’ Architectures des Systeme du CNRS

Tuesday, October 17, 2000 — Early Morning (8:20-10:20)

Session 5: Nanostructures — Chair: Y.-H. Xie

08:20	5-1 Non-Linear Optical and Electro-Optic Properties of InAs/GaAs Self-Organized Quantum Dots (page 29) S. Ghosh, A. S. Lenihan, M. V. G. Dutt, O. Qasaimeh, D. G. Steel, P. Bhattacharya; University of Michigan
08:40	5-2 Formation and Photoluminescence of Stacked CdSe Quantum Dots Grown by Molecular Beam Epitaxy (page 31) Yasuhiro Murase, Tsuguki Noma, Kenzo Maehashi, Hisao Nakashima; Osaka University
09:00	5-3 Self-Assembled Quantum Dot Transformation via Anion Exchange(page 33) Jeng-Jung Shen, April S. Brown, Yongqian Wang, Zhong L. Wang; Georgia Institute of Technology
09:20	5-4 Highly Uniform and High Optical Quality In0.22Ga0.78As/GaAs Quantum Wires Grown on (221)A GaAs Substrate by MBE (page 34) T. Nitta, H. Kanamori, Y. Ohno, S. Shimomura and S. Hiyamizu; Osaka University
09:40	5-5 Dislocation Induced Spatial Ordering of InAs Quantum Dots (page 36) S. Chaparro, R. Leon^*, S. R. Johnson, C. Navarro, X. Jin, Y.-H. Zhang; Arizona State University; ^*Jet Propulsion Laboratory
10:00	5-6 CBE Growth of InAs/InP Quantum Dots (page 38) P. J. Poole, J. P. McCaffrey, R. L Willlams, J. Lefebvre, N. Rowell; National Research Council of Canada
10:20–10:40		Coffee Break

Tuesday, October 17, 2000 — Late Morning (10:40-12:20)

Session 6: II-VI — Chair: S. Sivananthan

10:40	6-1 ZnxCdyMg1-x-ySe Distributed Bragg Reflectors Grown by Molecular Beam Epitaxy (page 40) O. Maksimov, S. P. Guo, Y. Y. Luo, W. Lin, M. C. Tamargo, F. C. Peiris^1, J. K. Furdyna^1; CUNY; ^1University of Notre Dame
11:00	6-2 MBE-Growth and Characterization of ZnTe:Cr^2+ Layers on GaAs (100) (page 42) Yu. G. Sadofyev, V. F. Pevtsov, E. M. Dianov^1, P. A. Trubenko^1, M. V. Korshkov^2; P. N. Lebedev Physical Institute RAS; ^1General Physics Institute RAS; ^2State Radio-engineering Academy
11:20	6-3 Electrical Properties of In-Situ As Doped Hg1-xCdxTe Epilayers Grown by Molecular Beam Epitaxy (page 43) Y. Selamet, T. S. Lee, S. Sivananthan; University of Illinois at Chicago
11:40	6-4 Growth of Single Crystalline CdS on CdTe by MBE (page 45) Paul Boieriu, Robert Sporken^1, Yan Xin, N. D. Browning, S. Sivananthan; University of Illinois at Chicago; ^1Facults Universitaires Notre-Dame de la Paix
12:00	6-5 Strain-Mediated Phase Coexistence in MnAs Films on GaAs (page 47) B. Jenichen, V. M. Kaganer, F. Schippan, W. Braun, L. Däweritz and K. H. Ploog Paul-Drude-Institut für Festkörperelektronik
12:20–13:40		Lunch Break

Tuesday, October 17, 2000 — Mid-Afternoon (13:40-15:00)

Session 7: Antimonides — Chair: T. C. Hasenberg

13:40	7-1 Long Wavelength Pseudomorphic InGaAsSb Active Materials Grown on GaAs (page 49) S. R. Johnson, C. Navarro, S. Chaparro, J. Xu, C. -Z. Guo, P. Dowd, W. Braun, Y.-H. Zhang; Arizona State University
14:00	7-2 Growth, Structure and Optical Properties of GaAsSb Quantum Wells on GaAs (page 51) J. E. Cunningham, M. Dinu, J. Shah, M. D. Williams^1; Lucent-Bell Laboratories; ^1Atlanta Clark University
14:20	7-3 Optical Properties of InGaAs/AIAsSb Type-I Single Quantum Wells Lattice-Matched to InP Grown by Molecular Beam Epitaxy (page 52) Nikolai Georgiev, Teruo Mozume; Femtosecond Technology Research Association (FESTA)
14:40	7-4 InAs/InGaSb Type-II Interband Cascade Lasers (page 53) H. -W. Ren, Jun Zheng, H. Q. Le, S. S. Pei, S. V. Zaitsov^1, W. Y. Hwang^1, J. Um^1, Chih-Hsiang Lin^1; University of Houston; ^1Applied Optoelectronics Inc.
15:00–15:20		Coffee Break

Tuesday, October 17, 2000 — Late Afternoon (15:20-16:20)

Poster Session 1

15:20	P1-1 Spontaneous Formation of InAs Nanowires on Nominal InP (001) (page 55) Hanxuan Li, Theda Daniels-Race and Mohamed-Ali Hasan^1; Duke University; ^1University of North Carolina at Charlotte
	P1-2 Transition from Nanowires to Dots (page 56) Haeyeon Yang and G. J. Salamo; University of Arkansas
	P1-3 Photoluminescence Properties of Self-assembled InAs Quantum Dots Grown on InP Substrates by Solid source Moleculor Beam Epitaxy (page 57) Q. D. Zhuang, S. F. Yoon, H. Q. Zheng; Nanyang Technological University
	P1-4 Microstructural Evolution of Ge/Si (100) Islands (page 58) David J. Smith, D. Chandrasekhar, P. A. Crozier, M. Floyd, M. R. McCartney, Jeff Drucker^1, S. Chaparro^1, Y. Zhang^1; Arizona State University; ^1University of Texas at El Paso
	P1-5 Systematic Study of Surfactant-mediated Growth and Characterization of Ge(211)/Si (211) (page 59) S. Tari, G. Brill, A. Prociuk, S. Sivananthan, M. Floyd^1, David J. Smith^1; University of Illinois at Chicago; ^1Arizona State University
	P1-6 Photoluminescence of the ZnTe (Yb) Films Grown on (100) GaAs by MBE (page 60) Yu. G. Sadofyev, V. M. Konnov, N. N. Loiko, A. A. Gippius, P. N. Lebedev; Physical Institute of the Russian Academy of Sciences P1-7 Determination of the Indices of Refraction of MBE-Grown ZnSe/ZnCdSe Multiple Quantum Well Structures (page 61) F. C. Peiris, U. Bindley, J. K. Furdyna; University of Notre Dame P1-8 In-Situ Control of Temperature and Alloy Composition of Cd1-xZnxTe Grown by Molecular Beam Epitaxy (page 62) M. Daraselia, J. W. Garland, S. Sivananthan; University of Illinois P1-9 Temperature Overshoot Measurements During Growth of the InGaAs/AlGaAs pHEMT System (page 63) Joseph G. Pellegrino, Jonathan Guyer, Wen Tseng, W. Robert Thurber, Donald A. Gajewski, C. A. Richter; National Institute of Standards and Technology
P1-10 In Situ Metrology for Real-time Control of Molecular Beam Epitaxy Growth of Pseudomorphic InGaAs Thin Films (page 64) Donald A Gajewski, Jonathan E. Guyer, Jeff Hale^1 and Joseph G, Pellegrino; National Institute of Standards and Technology; ^1J. A. Woollam Co.
P1-11 The Art of High P-Type Doping of InGaAs Using Carbon Tetrabromide in Chemical Beam Epitaxy (page 65) A. Kuhl, R. Arès, R. Streater; Nortel Networks P1-12 Improved Substrate Temperature Uniformity in a Commercial 4-inch Single-wafer MBE Reactor with a Dual-Zone Substrate Heater (page 67) Xiao-Ming Fang, Troy Yurasits, Dmitri Loubychev, Amy W. K. Liu, Mike DeBruzzi^1, Scott Priddy^1, Charles Schiprett^1; IQE Inc.; ^1EPI MBE Products Group
P1-13 The Roles of MBE Growth Temperature, Growth Rate and In % on InGaAs Microstructure and PHEMT Properties (page 68) X. Deng, W. Liu, M. E. Lin, Jie Zhang^1; Alpha Industries, Inc.; ^1Michigan Technological University
P1-14 Growth and Characterization of Size-Tailored InAs/AlxGa1-xAs Quantum Dots for Intraband Infrared Photodetectors (page 69) Z. H. Chen, O. Baklenov, E. T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye^1, F. Ma^1, B. Yang^1,J. Campbell^1; University of Southern California. ^1University of Texas at Austin.
P1-15 Growth and characterization of Fe/InAs hybrid structure for spin-polarized electron injection (page 70) K. Yoh, H. Ohno, A. Subagyo, K. Sueoka, K. Mukasa; Hokkaido University.

Tuesday, October 17, 2000 — Late Afternoon (16:20-17:20)

Poster Session 2

16:20	P2-1 CBE Growth of GaN on Si (100) and Si (111) Using Ammonia and Triethyl Gallium Precursors (page 72) A. Tempez, E. Kim, A. Bensaoula; SVEC, University of Houston
	P2-2 Optical Characterization of In.15Ga.85As1-xNx/GaAs Multiple Quantum Wells (page 74) J. B. Héroux, X. Yang, W. I. Wang; Columbia University
	P2-3 Microstructure of AlN Thin Films Before and After Ultrahigh Temperature Processing (page 76) David J. Smith, Z. Y. Fan, N. Newman; Arizona State University
	P2-4 Theoretical study of GaN MBE Growth Using ECR Nitrogen Plasma (page 77) Wenning Fu, Rama Venkat, Meyya Meyyappan^1; University of Nevada; ^1NASA Ames Research Center
	P2-5 MBE Growth of an Al Mazed Bicrystal Thin Film on (100) Si (page 79) A. F. Schwartzman, J. Yin, J. Inoue^1, C. L. Briant, L. B. Freund, R. Beresford; Brown University; ^1University of Tokyo
	P2-6 STM Observation of GaAs (001) c(4×4)-As Surface During As4 Irradiation (page 81) Shiro Tsukamoto and Nobuyuki Koguchi; National Research Institute for Metals
	P2-7 Effects of the Substrate Tilting Angle on the Molecular Beam Epitaxial Growth of GaAs on Si (100) (page 83) M. Meléndez-Lira, M. A. Santana-Aranda^1, M. López-López, M. Tamura, T. Yodo^1, and M. A. Vidal^2; Centro de Investigación y de Estudios Avanzados del IPN; ^1Osaka Institute of Technology; ^2Universidad Autónoma de San Luis Postosi
	P2-8 Improvement of the Optical Quality of InAs/GaSb Superlattices Grown on GaSb by Molecular Beam Epitaxy (page 85) E. M. Shaw, T. C. Hasenberg, Lin Zhang, T. F. Boggess; University of Iowa
	P2-9 A Comparison of Spontaneous Lateral Composition Modulation in Various Materials Systems (page 87) C. Dorin and J. Mirecki-Millunchick; University of Michigan
	P2-10 In-Situ Composition Determination with X-ray and Optical Photons (page 89) Joseph Pellegrino, Donald Gajewski, N. V. Nguyen, Deane Chandler- Horowitz, Syed B. Qadri^1, Wen F. Tseng; National Institute of Standards and Technology; ^1Naval Research Laboratory
	P2-11 HgCdTe/Si Infrared Detector by MBE for TE Cooled Operation (page 91) S. Velicu, R. Ashokan, Don Rafol, P. Boieriu^1, C. H. Grein^1 and S. Sivananthan^1; Smart Pixel Inc.; Jet Propulsion Laboratory; ^1University of Illinois at Chicago
	P2-12 MBE Growth of IV-VI MQW Structures on Si (111), BaF2 (111) and PbSe (100) and Mid-IR PL Studies of Epilayer Heating (page 92) P. J. McCann, H. Z. Wu, K. Namjou, D. McAlister, X. M. Fang; University of Oklahoma