Gain in electrically-driven 3 m dilute nitride vcsoas

Gain in electrically-driven 1.3 m dilute nitride VCSOAs

S. B. Lisesivdin^{1, 2*}, N. A. Khan¹, S. Mazzucato³, N. Balkan¹, and M. J. Adams¹

¹ School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, CO4 3SQ, UK.

² Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500, Ankara, Turkey

³ Université de Toulouse, LPCNO, INSA-UPS-CNRS, 135 avenue de Rangueil, F-31400 Toulouse, France

* Corresponding Author: Tel.: [phone]. E-mail address: [e-mail] (S.B. Lisesivdin).

Abstract

We reported an optical amplification of electrically driven dilute nitride 1.3 m vertical cavity semiconductor optical amplifier (VCSOAs) with 5 m aperture at room temperature. With the help of amplified spontaneous emission and amplified optical signal, gain is calculated with respect to injected light's wavelength and power for two types of samples, which are with and without a confinement layer located at the top of bottom Distributed Bragg Reflector (DBR). At lower injected laser powers, nearly 10 dB gains are observed for both samples. At power injections over 1nW, gain is observed to drop to a value of 0 dB, drastically. For nearly all power values, sample with confinement layer represents slightly higher gain.

Keywords: Dilute nitride, optically injected, gain, Vertical Cavity Semiconductor Optical Amplifiers (VCSOAs)

Fig. Power dependent gain of the electrically driven 1.3 mm VCSOAs with or without oxide confinement layer