Information society technologies

Institutes involved in Characterisation and Physical Properties Work-Package (WP2)

Structural Characterisation	Optical Characterisation
Akdeniz University Imperial College Low dimensional systems – Bucharest Philipps University E.T.S.I. Telecomunicacion Universität Erlangen University of Athens University of Bologna University of Cádiz Universitaet Karlsruhe University of Liverpool University of Nottingham Université Paul Sabatier University of Sheffield University of Warwick	Bilkent University CNRS-INSA___LAAS-CNRS___LPN-CNRS___Linköping_University'>Optoelectronics Laboratory CNRS-INSA LAAS-CNRS LPN-CNRS Linköping University Philipps University E.T.S.I. Telecomunicacion Royal Institute of Technology LPSCE Monastir University of Montpellier University of Athens University of Essex Universität Karlsruhe University of Nottingham Université Paul Sabatier Universita di Roma University of Sheffield University of Strathclyde University of Surrey Wroclaw Univ. of Tech.
Defects	Transport Properties
LAAS-CNRS LPN-CNRS FHM – Munich E.T.S.I. Madrid LPSCE Monastir University of Athens Universidade de Aveiro Linköping University Université Paul Sabatier CNRS-INSA Universitaet Karlsruhe University of Montpellier	University of Essex LAAS-CNRS LPN-CNRS Low dimensional systems – Bucharest E.T.S.I. Telecomunicacion Ruhr-Universität University of Athens University of Nottingham University of Warwick

WP3: Devices & Device Integration

The primary purpose of this Work-package is to provide a European transnational framework for the co-ordination and strategic development of device research in dilute III-V nitrides (III-N_x-V_1-x ‘s) in toto. To encompass the full device potential of this novel and exciting family of metastable semiconductors, we include III-N-As, III-N-P and III-N-Sb materials in our considerations, covering specific alloys including the following, whose approximate bandgap wavelength ranges are shown in brackets: InNP/InP (0.9 - 1.0 m), InNAs/InGaAs/InP (2 - 3 m), GaInNP/GaAs (0.7 - 0.85 m), GaAsN/GaAs (0.85 - 1.2 m), GaInNAs/GaAs (1.2 - 1.6 m), InGaAsN/InGaAsP/InP (1.2 - 2 m) , GaPN/GaP (0.6 - 0.7 m), and InNSb/GaAs (10 - 15 m).

Of the above, the most attention to date has been focused on the GaInNAs/GaAs system, mainly because of its potential for optoelectronic devices covering the 1.3 - 1.55 m data- and telecommunications wavelength bands. As is now widely appreciated, these GaAs-compatible structures allow monolithic integration of AlGaAs-based distributed Bragg reflector mirrors (DBRs) for vertical cavity surface-emitting lasers with low temperature sensitivity and compatibility with AlO_x-based confinement techniques. We also pay strong attention to GaInNAs, but interpret its potential much more broadly than has typically been the case to date, where the electrically-pumped VCSEL considerations have predominated. European laboratories have taken the lead world-wide in broadening the scope of GaInNAs device activity, and we seek to accelerate this trend within the DiNAMITe consortium.
The key integration challenges and cluster vision for the Devices Work-package are illustrated in Fig. 4.3. The consortium will enable a critical mass of device expertise and knowledge to be established and to harness the widely distributed complementary activities of growth, characterisation and theory/modelling in Europe. The primary challenge will be to meaningfully integrate the inputs from these activities in order to leverage the technology base to produce commercial devices within a realistic timeframe. This will be achieved by transferring the growth and characterisation knowledge (developed in WP1 and WP2) and powerful modelling tools (WP4). Our strategy for integration includes supply of material and device samples and modelling tools, exchange of experienced researchers and cross-cluster training of research students. This will ensure that maximum advantage is taken of the high level of European research activity in dilute nitrides in the drive towards commercialisation.

Innovation

Limitations

Optimisation