International organisation for standardisation



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10.2Promotional activities

10.2.1Technical documents


The following documents were approved


12173

Short descriptions

No

11/07/22

12189

Description of RVC

Y

11/08/31

12235

Unified Speech and Audio Coding

Y

11/07/22

10.2.2Press release


The following document was approved


12060

Torino press release

Y

11/07/31



11Resolutions of this meeting


These were approved

12A.O.B.


There was no other business

13Closing


Meeting closed at 2011/07/22T19:30



  1. Attendance list

#

Title

First Name

Last name

Institution

Stato

1

Mr.

Kouadio

Adi

EBU

Switzerland

2

Mr.

Junaid Jameel

Ahmad

University of Konstanz

Germany

3

Mr.

June Il

Ahn

KEA

South Korea

4

Dr.

Minsu

Ahn

Samsung Advanced Institute of Technology

South Korea

5

Dr.

Ozgu

Alay

T-VIPS AS

Norway

6

Mr.

Daniele

Alfonso

STMICROELECTRONICS

Italy

7

Dr.

Jerbi

Ali

Cisco

Canada

8

PhD.

Walter

Allasia

EURIX

Italy

9

Dr.

Elena

Alshina

Samsung Electronics Ltd.

South Korea

10

Mr.

Peter

Amon

Siemens AG

Germany

11

Dr.

Kenneth

Andersson

Ericsson AB

Sweden

12

Dr.

Akio

Ando

NHK

Japan

13

Mr.

Tea

Anselmo

STMICROELECTRONICS SRL

Italy

14

Mr.

Hirofumi

Aoki

NEC corporation

Japan

15

Mr.

Shuichi

Aoki

NHK

Japan

16

Mr.

Kohtaro

Asai

Mitsubishi Electric Corporation

Japan

17

Prof.

Oscar C.

Au

HK Univ of Sci & Tech

Hong Kong

18

Dr.

Cheung

Auyeung

Sony Electronics Inc.

United States

19

Dr.

Seong-Jun

Bae

ETRI

South Korea

20

Dr.

Tae Meon

Bae

Sk Telecom

South Korea

21

Mr.

Gero

Baese

Siemens

Germany

22

Mr.

Giovanni

Ballocca

Sisvel Technology srl

Italy

23

Dr.

Yukihiro

Bando

NTT

Japan

24

Mr.

GUN

BANG

ETRI

South Korea

25

Ms.

Osnat

Bar-Nir

Harmonic inc

Israel

26

Dr.

Vittorio

Baroncini

Fondazione Ugo Bordoni

Italy

27

Dr.

Ali

Begen

Cisco

Canada

28

Dr.

Abdellatif

Benjelloun Touimi

Huawei Technologies

United Kingdom

29

Mr.

Remi

Bertin

Allegro DVT

France

30

Mr.

Michael

Biber

Dolby Laboratories

United States

31

Dr.

Oguz

Bici

TUT / Nokia

Finland

32

Dr.

Lazar

Bivolarsky

Skype Technologies S.A.

United States

33

Dr.

Gisle

Bjontegaard

Cisco

Norway

34

Dr.

Miroslaw

Bober

Mitsubishi Electric R&D Center Europe

United Kingdom

35

Dr.

Laurent

Boch

RAI - Radiotelevisione Italiana

Italy

36

PhD.

Yann

Bodo

Nagravision

France

37

Mr.

Johannes

Boehm

Technicolor, Deutsche Thomson OHG

Germany

38

Mr.

Ronan

Boitard

INRIA, RENNES

France

39

Mr.

Joveski

Bojan

Institut Telecom, Telecom SudParis

France

40

Mr.

Philippe

Bordes

Technicolor

France

41

Dr.

Frank

Bossen

DOCOMO USA Labs

United States

42

Ms.

Jill

Boyce

Vidyo, Inc.

United States

43

Mr.

Benjamin

Bross

Fraunhofer HHI

Germany

44

Mr.

Fons

Bruls

Philips

Netherlands

45

Ms.

Arcangelo

Bruna

STMICROELECTRONICS

Italy

46

Dr.

Madhukar

Budagavi

Texas Instruments Inc.

United States

47

PhD.

Xiaoran

Cao

Tsinghua University

China

48

Mr.

Pablo

Carballeira

Universidad Politecnica de Madrid

Spain

49

Mr.

Helder

Castro

INESC PORTO

Portugal

50

Mr.

Mary-Luc

Champel

Technicolor

France

51

Mr.

Ti Eu

Chan

Institute For Infocomm Research (A*STAR)

Singapore

52

Mr.

Vijay

Chandrasekhar

Stanford University

United States

53

Mr.

Wo

Chang

National Institute of Standards and Technology

United States

54

Mr.

Chun-Fu

Chen

NCKU/ITRI

Taiwan

55

PhD.

Fang-Chu

Chen

Industrial Tehcnology Research Institue

Taiwan

56

Mr.

Jianle

Chen

SAMSUNG ELECTRONICS CO., LTD

South Korea

57

Mr.

Weizhong

Chen

Huawei technologies CO.,LTD

China

58

Dr.

Ying

Chen

Qualcomm

United States

59

PhD.

Lai-Tee

Cheok

Samsung

United States

60

Mr.

Ku

Cheonhak

LG Electronics

South Korea

61

Dr.

Wei-Jung

Chien

Qualcomm

United States

62

Mr.

Toru

Chinen

Sony Corporation

Japan

63

Dr.

Yi-Jen

Chiu

Intel Corp.

United States

64

Mr.

Jae Hee

Cho

Sejong Univ. / DMS

South Korea

65

Mr.

Seunghyun

Cho

ETRI

South Korea

66

Dr.

Yongju

Cho

ETRI

South Korea

67

PhD.

Yong-Sang

Cho

KATS

South Korea

68

Prof.

Haechul

Choi

Hanbat National University

South Korea

69

Mr.

Hyomin

Choi

Kwangwoon University

South Korea

70

Dr.

Kiho

Choi

Hanyang University

South Korea

71

Dr.

Miran

Choi

ETRI

South Korea

72

Dr.

Sung Yun

Choi

Feelingk

South Korea

73

Dr.

In Suk

Chong

Qualcomm

United States

74

Mr.

Keiichi

Chono

NEC Corporation

Japan

75

Dr.

Tzu-Der

Chuang

MediaTek

Taiwan

76

Mr.

Takeshi

Chujoh

Toshiba Corporation

Japan

77

Mr.

Sorin

Cismas

Maxim Integrated Products

United States

78

Mr.

Muhammed

Coban

Qualcomm

United States

79

Dr.

Robert

Cohen

Mitsubishi Electric

United States

80

Dr.

Giovanni

Cordara

Telecom Italia

Italy

81

Ms.

Li

Cui

Hanyang University

South Korea

82

Mr.

Nicholas

Culver

Altera

United Kingdom

83

Mr.

Paolo

D'Amato

Sisvel Technology srl

Italy

84

Dr.

Thomas

Davies

Cisco Systems

United Kingdom

85

PhD.

Jan

De Cock

Ghent University - IBBT

Belgium

86

Prof.

Jaime

Delgado

DMAG-UPC

Spain

87

Dr.

Wenpeng

Ding

Beijing University of Technology, College of Computer Science

China

88

Dr.

Jie

Dong

InterDigital Communications

United States

89

Ms.

Virginie

Drugeon

Panasonic

Germany

90

Dr.

Lingyu

Duan

Peking University

China

91

Prof.

Touradj

Ebrahimi

EPFL

Switzerland

92

Mr.

Myungjin

Eom

Samsung Electronics

South Korea

93

Mr.

Semih

Esenlik

Panasonic Corporation

Germany

94

PhD.

Nak Woong

Eum

ETRI

South Korea

95

Mr.

Jean-Pierre

Evain

EBU

Switzerland

96

Mr.

Pascal

Eymery

ALLEGRO DVT

France

97

Mr.

Eyal

Farkash

NDS

Israel

98

Dr.

Henry

Felix

Orange Labs

France

99

Dr.

Felix

Fernandes

Samsung

United States

100

Dr.

Gerard

Fernando

ZTE Corporation

United Kingdom

101

Mr.

Davide

Ferri

Sisvel Technology srl

Italy

102

Mr.

David

Flynn

BBC Research & Development

United Kingdom

103

Mr.

Chad

Fogg

Harmonic Inc

United States

104

Mr.

Etienne

Fortin

Sensio technologies Inc.

Canada

105

Mr.

Guido

Franceschini

Telecom Italia spa

Italy

106

Mr.

Gianluca

Francini

Telecom Italia

Italy

107

Dr.

Edouard

Francois

CANON Research Centre France SAS

France

108

Dr.

Per

Frojdh

Ericsson

Sweden

109

Mr.

Deliang

Fu

Zhejiang University

China

110

Mr.

Akira

Fujibayashi

NTT docomo,Inc.

Japan

111

Dr.

Toshiaki

Fujii

Nagoya University

Japan

112

Mr.

Shigeru

Fukushima

JVC KENWOOD Holdings, Inc.

Japan

113

Dr.

Arild

Fuldseth

CIsco

Norway

114

Ms.

Martin-Cocher

Gaëlle

Research In Motion Ltd

Canada

115

PhD.

Francesco

Gallo

EURIX

Italy

116

Dr.

Wen

Gao

Huawei Technologies Inc.

United States

117

Prof.

Wen

Gao

Peking University

China

118

Mr.

Eric

Gautier

Technicolor

France

119

Mr.

Jean H.A.

Gelissen

Philips Research

Netherlands

120

Mr.

Diego

Gibellino

Telecom Italia S.p.A.

Italy

121

Mr.

Alex

Giladi

Avail-TVN

United States

122

Mr.

Vittorio

Giovara

Sisvel Technology

Italy

123

Dr.

Philippe

Gournay

VoiceAge Corp.

Canada

124

Mr.

Adrian

Grange

Google Inc

United States

125

Prof.

Marco

Grangetto

Politecnico di Torino

Italy

126

Dr.

Bernhard

Grill

Fraunhofer Institute for Integrated Circuits IIS

Germany

127

Mr.

Karsten

Grüneberg

Fraunhofer HHI

Germany

128

Dr.

Qunshan

Gu

Google Inc

United States

129

Mr.

Marc

Guez Vucher

SCPP

France

130

Mr.

Laurent

Guillo

INRIA

France

131

Dr.

Xun

Guo

MediaTek (Beijing) Inc.

China

132

Mrs.

RyeongHee

Gweon

Sejong University

South Korea

133

Mr.

Antti

Hallapuro

Nokia

Finland

134

Dr.

Jae Joon

Han

Samsung Advanced Institute of Technology

South Korea

135

Prof.

Jong Ki

Han

Sejong University

South Korea

136

Mr.

Kihun

Han

Research Center Feelingk

South Korea

137

Dr.

Seungju

Han

Samsung Electronics

South Korea

138

Dr.

Woo-Jin

Han

Samsung Electronics

South Korea

139

Prof.

Ming (Hsueh-Ming)

Hang

NCTU/ITRI-USA

Taiwan

140

Dr.

Miska

Hannuksela

Nokia Corporation

Finland

141

Mr.

Munsi A

Haque

Sony Electronics Inc.

United States

142

Mr.

Noboru

Harada

NTT

Japan

143

Dr.

Ryoji

Hashimoto

Renesas Electronics Corporation

Japan

144

Dr.

Dake

He

Research In Motion

Canada

145

Mr.

Tim

Hellman

Broadcom

United States

146

Mr.

Hendry

Hendry

LG Electronics

South Korea

147

Prof.

Juergen

Herre

Fraunhofer Institut IIS

Germany

148

Mr.

Mitsuhiro

Hirabayashi

SONY Corporation

Japan

149

Prof.

Yo Sung

Ho

GIST

South Korea

150

Dr.

Dzung

Hoang

Zenverge

United States

151

Mr.

Ingo

Hofmann

Fraunhofer IIS

Germany

152

PhD.

Danny

Hong

Vidyo, Inc.

United States

153

Mr.

Hotaek

Hong

LG Electronics

South Korea

154

Mr.

Sung-Wook

Hong

Sejong University

South Korea

155

Mr.

Yingjie

Hong

ZTE Corporation

China

156

Dr.

Michael

Horowitz

eBrisk Video

Canada

157

Mr.

Pengjun

Huang

Qualcomm Inc.

United States

158

Dr.

Yu-Wen

Huang

MediaTek

Taiwan

159

Mr.

Gary

Hughes

Motorola Mobility, Inc

United States

160

Mr.

Kilroy

Hughes

Microsoft

United States

161

Mr.

Walt

Husak

Dolby/Smpte

United States

162

Mr.

Kyeong Tae

Hwang

Nextreaming

South Korea

163

Dr.

Sung Oh

Hwang

Samsung Electronics

South Korea

164

Mr.

Sunghee

Hwang

Samsung

South Korea

165

Mr.

Atsuro

Ichigaya

NHK (Japan Broadcasting Corporation)

Japan

166

Mr.

Masaru

Ikeda

Sony

Japan

167

Mr.

Kota

Iwamoto

NEC

Japan

168

Mr.

Fabian

Jaeger

RWTH Aachen University

Germany

169

Prof.

Euee S.

Jang

Hanyang University

South Korea

170

Mr.

Ohm

Jens-Rainer

RWTH Aachen

Germany

171

Dr.

ByeongMoon

Jeon

LG Electronics

South Korea

172

Prof.

Byeungwoo

Jeon

Sungkyunkwan University

South Korea

173

Mr.

Yongjoon

Jeon

LG Electronics

South Korea

174

Prof.

Dong Seok

Jeong

Inha University

South Korea

175

Dr.

Sangoh

Jeong

LG Electronics

South Korea

176

Dr.

Xiangyang

Ji

TSINGHUA UNIVERSITY

China

177

Dr.

Jie

Jia

LGElectronics

United States

178

Dr.

Xin

Jin

Information Technology Research Organization, Waseda University

Japan

179

Dr.

Jung

Joel

Orange Labs

France

180

Dr.

Sang Hyun

Joo

ETRI

South Korea

181

Mr.

Rajan

Joshi

Qualcomm

United States

182

Prof.

Eduardo

Juarez

Universidad Politecnica de Madrid

Spain

183

Mr.

Tae-young

Jung

Chips&Media

South Korea

184

Prof.

Itaru

Kaneko

Tokyo Polytechnic University

Japan

185

Mr.

Jewon

Kang

Tampere University of TechnologyNokia

Finland

186

Dr.

Jungwon

Kang

ETRI

South Korea

187

Dr.

Kyeongok

Kang

ETRI

South Korea

188

Dr.

Uong Nam

Kang

Nextreaming

South Korea

189

Mr.

Mukta

Kar

CableLabs

United States

190

Mrs.

Marta

Karczewicz

Qualcomm

United States

191

Mr.

Kei

Kawamura

KDDI CORPORATION

Japan

192

Mr.

Kimihiko

Kazui

FUJITSU LABORATORIES LTD.

Japan

193

Dr.

Joachim

Keinert

Fraunhofer IIS

Germany

194

Mr.

sylvain

kervadec

Orange Labs

France

195

Mr.

Abdellatif

Khindouf

ALLEGRO DVT

France

196

Mr.

Kei

Kikuiri

NTT DOCOMO, INC.

Japan

197

PhD.

Chanyul

Kim

samsung electronics

South Korea

198

Prof.

Hae Kwang

Kim

Sejong Univ.

South Korea

199

Dr.

Hui Yong

Kim

ETRI

South Korea

200

Mr.

Hyun Dong

Kim

Sejong University

South Korea

201

Mr.

Il-Koo

Kim

Samsung Electronics Co., Ltd.

South Korea

202

Dr.

Jae Hoon

Kim

Motorola

United States

203

Prof.

Jae-Gon

Kim

Korea Aerospace University

South Korea

204

Mr.

Jaeha

Kim

GIST

South Korea

205

Mr.

Jaeil

Kim

KAIST

South Korea

206

Mr.

Jong-ho

Kim

Yonsei University

South Korea

207

Mr.

Junoh

Kim

Kyung Hee University

South Korea

208

Mr.

Kibaek

Kim

Hanyang University

South Korea

209

Prof.

Kyuheon

Kim

Hyundae 3th Apartment 103 dong 1504ho

South Korea

210

Mr.

Kyung Ho

Kim

LG Electronics

South Korea

211

Mr.

Kyung Won

Kim

KETI

South Korea

212

Mr.

Kyung Yong

Kim

KyungHee Univ.

South Korea

213

Mrs.

Miyoung

Kim

Samsung Electronics

South Korea

214

Prof.

Munchurl

Kim

Korea Advanced Institute of Science and Technology

South Korea

215

Prof.

Sang-Kyun

Kim

Myongji University

South Korea

216

Mr.

Seongwan

Kim

Yonsei University

South Korea

217

Mrs.

Sung Hei

Kim

ETRI

South Korea

218

Dr.

Sunghan

Kim

ETRI

South Korea

219

Prof.

Yong Han

Kim

University of Seoul

South Korea

220

Dr.

Yong-Hwan

Kim

KETI

South Korea

221

Mr.

Heiner

Kirchhoffer

Fraunhofer HHI

Germany

222

Mr.

Kristofer

Kjoerling

Dolby Sweden AB

Sweden

223

Mr.

Tomoya

Kodama

Toshiba Corporation

Japan

224

Mr.

Takuyo

Kogure

Panasonic

Japan

225

Dr.

Krasimir

Kolarov

Apple, Inc.

United States

226

Mr.

Kenji

Kondo

Sony corporation

Japan

227

Mr.

Jumpei

Koyama

FUJITSU LABORATORIES LTD.

Japan

228

Mr.

Ferenc

Kraemer

Dolby Germany GmbH

Germany

229

Dr.

Panos

Kudumakis

Queen Mary University of London

United Kingdom

230

Dr.

Jae Cheol

Kwon

Central Research Lab., KT

South Korea

231

Mr.

Sun Hyoung

Kwon

ETRI

South Korea

232

Mr.

Stephan

Lachowsky

Maxim

United States

233

Mr.

Changcai

Lai

Huawei Technologies Co., Ltd.

China

234

Mr.

PoLin

Lai

Samsung

United States

235

Mr.

Jani

Lainema

Nokia

Finland

236

Dr.

Guillaume

Laroche

CANON Research Centre France SAS

France

237

Mr.

Jean

Le Feuvre

Telecom ParisTech

France

238

Mr.

Gun-Ill

Lee

Samsung Electronics

South Korea

239

Prof.

Gwo Giun

Lee

NCKU/ITRI

Taiwan

240

Mr.

Hae

Lee

Etri

South Korea

241

Mr.

Han Soo

Lee

Kyunghee University

South Korea

242

Mr.

Jae Yung

Lee

Sejong University

South Korea

243

Mr.

Jaeho

Lee

Yonsei University

South Korea

244

Mr.

Jaejoon

Lee

Samsung Electronics

South Korea

245

PhD.

Jin Young

Lee

ETRI

South Korea

246

Mr.

Jinho

Lee

ETRI

South Korea

247

Ms.

Ju Ock

Lee

Sejong University

South Korea

248

Mr.

Jun-Woo

Lee

INHA University

South Korea

249

Prof.

Sangyoun

Lee

Yonsei University

South Korea

250

Mr.

Seung Wook

Lee

ETRI

South Korea

251

Mr.

Sinwook

Lee

HANYANG UNIVERSITY

South Korea

252

Dr.

Sukho

Lee

ETRI

South Korea

253

PhD.

Sunil

Lee

Samsung Electronics

South Korea

254

Mr.

Taejin

Lee

ETRI

South Korea

255

Mr.

Yonghun

Lee

Kyung Hee university

South Korea

256

Prof.

Yung Lyul

Lee

Sejong University

South Korea

257

Dr.

Roch

Lefebvre

VoiceAge Corporation / Université de Sherbrooke

Canada

258

Dr.

Shawmin

Lei

MediaTek

Taiwan

259

Dr.

Athanasios

Leontaris

Dolby Laboratories, Inc.

United States

260

Mr.

Vladimir

Levantovsky

Monotype Imaging Inc.

United States

261

Mr.

Guichun

Li

Santa Clara University

United States

262

Mr.

Jin

Li

Panasonic

Singapore

263

PhD.

Ming

Li

ZTE Corporation

China

264

Dr.

Xiang

Li

MediaTek (Beijing) Inc.

China

265

Dr.

Zhu

Li




United States

266

Mr.

ChongSoon

Lim

Panasonic Singapore Laboratories

Singapore

267

Mr.

Jaehyun

Lim

LG Electronics

South Korea

268

Dr.

Jeongyeon

Lim

SK telecom

South Korea

269

Mr.

Jiunn Bin

Lim

Panasonic SIngapore Laboratories

Singapore

270

Mr.

Seong Yong

Lim

ETRI

South Korea

271

Mr.

Sung-Chang

Lim

ETRI

South Korea

272

Mr.

Tae Beom

Lim

Korea Electronics Technology Institute

South Korea

273

Mr.

Younghun

Lim

Chips&Media

South Korea

274

Dr.

Youngkwon

Lim




South Korea

275

Dr.

Yongbing

Lin

Huawei Technologies

China

276

Dr.

Lingzhi

Liu

Huawei Technologies

United States

277

Dr.

Shan

Liu

MediaTek USA

United States

278

Dr.

Yu

Liu

Hong Kong Applied Science and Technology Research Institute (ASTRI)

Hong Kong

279

Dr.

Ajay

Luthra

Motorola Mobility

United States

280

Dr.

Siwei

Ma

Peking University

China

281

Dr.

Detlev

Marpe

Fraunhofer HHI

Germany

282

Mr.

Iain James

Marshall

Prologue

France

283

Mr.

Masaaki

Matsumura

NTT Corp.

Japan

284

Mr.

Shohei

Matsuo

NTT corporation

Japan

285

Dr.

Marco

Mattavelli

EPFL

Switzerland

286

Prof.

Massimo

Mauro

Università degli Studi di Brescia

Italy

287

Mr.

Ken

McCann

ZetaCast / Samsung

United Kingdom

288

Dr.

Alberto

Messina

RAI - Centre for Research and Technological Innovation

Italy

289

Mr.

Holger

Meuel

Institut fuer informationsverarbeitung, Leibniz Universitaet Hannover

Germany

290

Mr.

Akira

Minezawa

Mitsubishi Electric Corporation

Japan

291

PhD.

Koohyar

Minoo

Motorola Mobility

United States

292

Dr.

Mikhail

Mishurovskiy

Samsung research center, Moscow

Russia

293

Mr.

Seiji

Mochizuki

Renesas Electronics Corporation

Japan

294

Prof.

Francisco

Moran Burgos

Universidad Politecnica de Madrid

Spain

295

Ms.

Alessandra

Mosca

CSP

Italy

296

Mr.

Sungryeul Rhyu

Mr.

Samsung Electronics

South Korea

297

Ms.

Marta

Mrak

BBC R&D

United Kingdom

298

Dr.

Karsten

Müller

Fraunhofer HHI

Germany

299

Mr.

Markus

Multrus

Fraunhofer IIS

Germany

300

PhD.

Tokumichi

Murakami

Mitsubishi Electric Corporation

Japan

301

Dr.

Kevin

Murray

NDS

United Kingdom

302

Mr.

Franco

Mussino

Sisvel Technology srl

Italy

303

Mr.

Sang Il

Na

ETRI

South Korea

304

Mr.

Raj

Nair

Azuchi Systems Inc

United States

305

Dr.

Takayuki

Nakachi

NTT

Japan

306

Mr.

Hiroya

Nakamura

JVC Kenwood Holdings, Inc.

Japan

307

Dr.

Sam

Narasimhan

Motorola

United States

308

Dr.

Matthias

Narroschke

Panasonic

Germany

309

Dr.

Panos

Nasiopoulos

UBC

Canada

310

Mr.

Max

Neuendorf

Fraunhofer IIS

Germany

311

Dr.

Nhut

Nguyen

Samsung

United States

312

Mr.

Tung

Nguyen

Fraunhofer HHI

Germany

313

Mr.

Takahiro

Nishi

Panasonic

Japan

314

Mr.

Takeshi

Norimatsu

Panasonic Corporation

Japan

315

Dr.

Andrey

Norkin

Ericsson

Sweden

316

Mrs.

Yukiko

Ogura

IPSJ/ITSCJ

Japan

317

Ms.

Eunbin

Oh

Korean Standards Association

South Korea

318

Prof.

Seoung-Jun

Oh

Kwangwoon University

South Korea

319

Dr.

Weon Geun

Oh

ETRI

South Korea

320

Dr.

Patrice

Onno

CANON Research Centre France

France

321

Prof.

Joern

Ostermann

Leibniz Universitaet Hannover, Inst. fuer Informationsverarbeitung

Germany

322

Dr.

Peshala

Pahalawatta

Dolby Laboratories

United States

323

Mr.

Gregory

Pallone

Orange Labs

France

324

Mr.

Chao

Pang

HKUST

Hong Kong

325

Mr.

Krit

Panusopone

Motorola Mobility

United States

326

Mr.

JeongHoon

Park

Samsung Electronics Co., Ltd.

South Korea

327

PhD.

Jonghwan

Park

kyunghee University

South Korea

328

Mr.

Joonyoung

Park

LG Electronics

South Korea

329

Mr.

JungWook

Park

Electonic University 567ho

South Korea

330

Mr.

Kyungmo

Park

Samsung Electronics Co., Ltd.

South Korea

331

PhD.

Seongmo Park

Park

ETRI

South Korea

332

Mr.

Seungwook

Park

LG Electronics

South Korea

333

Mr.

YOUNG IL

PARK

SAMSUNG

South Korea

334

Ms.

Youngo

Park

SAMSUNG ELECTRONICS

South Korea

335

Dr.

Stavros

Paschalakis

Visual Atoms

United Kingdom

336

Mr.

Paolo

Pasteris

STMICROELECTRONICS

Italy

337

Mr.

Danilo

Pau

STMICROELECTRONICS

Italy

338

Dr.

Wen-Hsiao

Peng

NCTU/ITRI-USA

Taiwan

339

Mrs.

Isabelle

Perroux

Allegro DVT

France

340

Dr.

Philippe

Pierrick

Orange Labs

France

341

PhD.

David

Pope

Aptina Imaging

United States

342

Dr.

Mahsa

Pourazad

TELUS Communications

Canada

343

Dr.

Marius

Preda

Institut TELECOM

France

344

Mr.

Matthias

Preiss

Fraunhofer HHI

Germany

345

Prof.

Françoise

Preteux

MINES ParisTech

France

346

Mr.

Hyeoncheol

Pu

Samsung Electronics

South Korea

347

Mr.

Heiko

Purnhagen

Dolby Sweden AB

Sweden

348

Mr.

Harry

Pyle

Microsoft Corporation

United States

349

Dr.

Schuyler

Quackenbush

Audio Research Labs

United States

350

Dr.

Mohamad

Raad

RaadTech Consulting

Australia

351

Dr.

Majid

Rabbani

Eastman Kodak Company

United States

352

Dr.

Mickael

Raulet

IETR/INSA Rennes

France

353

Dr.

Yuriy

Reznik

Qualcomm Inc.

United States

354

Mr.

Jean-Francois

Ridel

SENSIO Technologies

Canada

355

Dr.

Justin

Ridge

Nokia

Finland

356

Mr.

Julien

Robilliard

Fraunhofer IIS

Germany

357

Dr.

Arturo

Rodriguez

Cisco Systems

United States

358

Mr.

Christopher

Rosewarne

canon Information Systems Research Australia

Australia

359

Dr.

Dmytro

Rusanovskyy

Nokia

Finland

360

Dr.

Thomas

Rusert

Ericsson AB

Sweden

361

Prof.

Jeha

Ryu

GIST

South Korea

362

Mr.

Mangesh

Sadafale

Texas Instruments

India

363

PhD.

Shinichi

Sakaida

NHK

Japan

364

Mr.

Jesus

Sampedro

Polycom

United States

365

Mr.

Yago

Sanchez de la Fuente

Fraunhofer HHI

Germany

366

Dr.

Masanori

Sano

NHK STRL

Japan

367

Mr.

Hisao

Sasai

Panasonic Corporation

Japan

368

Mr.

Kazushi

Sato

Sony Corp.

Japan

369

Mr.

Nicholas

Saunders

Sony Europe Ltd

United Kingdom

370

PhD.

Ankur

Saxena

Samsung Telecommunications America

United States

371

Mr.

Klaas

Schueuer

Dolby Berlin GmbH

Germany

372

Mr.

Ethan

Schur

TDVision Systems

United States

373

Mr.

Andrew

Segall

Sharp

United States

374

Mr.

Shun-ichi

Sekiguchi

Mitsubishi Electric Corporation

Japan

375

Mr.

Stian

Selnes

Cisco Systems

Norway

376

Dr.

Takanori

Senoh

National Institute of Information and Communications Technology

Japan

377

Mr.

Chanwon

Seo

Sejong University

South Korea

378

Prof.

Kwang-deok

Seo

Yonsei Univ.

South Korea

379

Mr.

Suman

Sharma

Intel Corporation

United States

380

Dr.

Karl

Sharman

Sony Broadcast & Professional Research Labs

United Kingdom

381

Dr.

BZ (Bazhong)

Shen

Broadcom

United States

382

Mr.

Youji

Shibahara

Panasonic

Japan

383

Mr.

Masato

Shima

Canon Inc.

Japan

384

Mr.

Satoshi

Shimada

FUJITSU LABORATORIES LTD.

Japan

385

Mr.

Shinya

Shimizu

NTT Corporation

Japan

386

Mr.

Avraham

Shimor

SanDisk Corporation

Israel

387

Prof.

Thomas

Sikora

TU Berlin, Sekr. EN 1

Germany

388

Prof.

Donggyu

Sim

KWU

South Korea

389

Mr.

David

Singer

Apple

United States

390

Mr.

Didier

Siron

STMicroelectronics

France

391

Mr.

Rickard

Sjoberg

Ericsson

Sweden

392

Dr.

Iraj

Sodagar

Microsoft

United States

393

Dr.

Joel

Sole

Qualcomm

United States

394

Dr.

Jaeyeon

Song

Samsung Electronics

South Korea

395

Mr.

Jeongook

Song

Yonsei University

South Korea

396

Mr.

Doehla

Stefan

Fraunhofer IIS

Germany

397

Mr.

Nikolce

Stefanoski

Disney Research Zurich

Switzerland

398

Dr.

Thomas

Stockhammer

Qualcomm Incorporated

Germany

399

Dr.

MARIO

STROPPIANA

QUARTARETE SPA

Italy

400

Mr.

Karsten

Suehring

Fraunhofer HHI

Germany

401

Mr.

Kazuo

Sugimoto

Mitsubishi Electric Corporation

Japan

402

Mr.

Toshiyasu

Sugio

Panasonic Corporation

Japan

403

Dr.

Gary

Sullivan

Microsoft Corp.

United States

404

Mr.

Huifang

Sun

Mitsubishi Electric Research Labs

United States

405

Mr.

Wendell

Sun

Motorola

United States

406

Mr.

Jaewon

Sung

LG Electronics

South Korea

407

Mr.

Teruhiko

Suzuki

Sony Corp.

Japan

408

Mr.

Yoshinori

Suzuki

NTT DOCOMO, Inc.

Japan

409

Dr.

Vivienne

Sze

Texas Instruments

United States

410

Dr.

Ali

Tabatabai

Sony Electronics Inc.

United States

411

Mr.

Gabriel

Takacs

Nokia

United States

412

Dr.

Seishi

Takamura

NTT Cyber Space Laboratories

Japan

413

Dr.

Joop

Talstra

Philips

Netherlands

414

Dr.

TK

Tan

NTT DOCOMO, Inc.

Japan

415

Dr.

Yih Han

Tan

Institute for Infocomm Research

Singapore

416

Prof.

Masayuki

Tanimoto

Nagoya University

Japan

417

Mr.

Akiyuki

Tanizawa

TOSHIBA CORPORATION

Japan

418

Dr.

Leon

Terentiv

Fraunhofer Institut

Hungary

419

Dr.

Andrew

Tescher

Microsoft corporation

United States

420

Mr.

Kian Seng

They

Panasonic Singapore Laboratories Pte Ltd

Singapore

421

Mr.

Herbert

Thoma

Fraunhofer Institut

Germany

422

Mr.

Kunlin

Thomas

STMICROELECTRONICS

Italy

423

Dr.

Dong

Tian

Mitsubishi Electric Research Labs

United States

424

Dr.

Christian

Timmerer

Alpen-Adria-Universität Klagenfurt

Austria

425

Mr.

Yasuaki

Tokumo

Sharp Corporation

Japan

426

Dr.

Pankaj

Topiwala

FastVDO

United States

427

Dr.

Alexandros

Tourapis

Magnum Semiconductor/Dolby Laboratories

United States

428

Dr.

Giuseppe

Tropea

CNIT

Italy

429

Dr.

Chia-Yang

Tsai

MediaTek

Taiwan

430

Mr.

Christian

Tulvan

Institut TELECOM

France

431

Mr.

Yi-Shin

Tung

MStar Semiconductor, Inc.

Taiwan

432

Mr.

Tadashi

Uchiumi

Sharp Corporation

Japan

433

Dr.

Kemal

Ugur

Nokia

Finland

434

Dr.

Stephane

Valente

ST-Ericsson

France

435

Dr.

Geert

Van der Auwera

Qualcomm Inc.

United States

436

Mr.

Sebastiaan

Van Leuven

Ghent University - IBBT

Belgium

437

Mr.

Glenn

Van Wallendael

Ghent University - IBBT

Belgium

438

Dr.

Anthony

Vetro

Mitsubishi Electric

United States

439

Mr.

Viktor

Wahadaniah

Panasonic Corporation

Singapore

440

Mr.

Wade

Wan

Broadcom Corporation

United States

441

Mr.

Jing

Wang

Research In Motion Limited

Canada

442

Mr.

Xianglin

Wang

Qualcomm Inc

United States

443

Dr.

Xin

Wang

Huawei Technologies USA

United States

444

Dr.

Ye-Kui

Wang

Huawei Technologies

United States

445

Dr.

Shuichi

Watanabe

Sharp Corporation

Japan

446

Mr.

Mark

Watson

Netflix

United States

447

Dr.

Thomas

Wedi

Panasonic

Germany

448

Mr.

Krzysztof

Wegner

Poznan University of Technology

Poland

449

Mr.

Xing

Wen

Hong Kong Univ. of Scicence and Technology

Hong Kong

450

Dr.

Stephan

Wenger

Vidyo, Inc.

United States

451

Mr.

Oomen

Werner

Philips

Netherlands

452

Mr.

Thomas

Wiegand

Fraunhofer HHI

Germany

453

Mr.

Adrian

Wise

Aspex Semiconductor Ltd

United Kingdom

454

Mr.

Kwanghyun

Won

Sungkyunkwan University

South Korea

455

Dr.

Ping

Wu

ZTE (UK) Ltd

United Kingdom

456

Mr.

Jizheng

Xu

Microsoft Research Asia

China

457

Dr.

Lidong

Xu

Intel Corp.

China

458

Dr.

Akio

Yamada

NEC Corp.

Japan

459

Mr.

Tomoo

Yamakage

TOSHIBA

Japan

460

Mr.

Tomoyuki

Yamamoto

SHARP Corporation

Japan

461

Mr.

Haitao

Yang

Huawei Technologies co., Ltd

China

462

Mr.

Jungyoup

Yang

Sungkyunkwan University

South Korea

463

Mr.

Yukinobu

Yasugi

SHARP Corporation

Japan

464

Dr.

Yan

Ye

InterDigital Communications Inc

United States

465

PhD.

Sehoon

Yea

LG Electronics

South Korea

466

Dr.

Chuohao

Yeo

Institute for Infocomm Research

Singapore

467

Mr.

Sang Yong

Yi

Korea Aerospace University

South Korea

468

Ms.

Sunmi

Yoo

Kwangwoon University

South Korea

469

Prof.

Kyoungro

Yoon

Konkuk University

South Korea

470

Mr.

Binbin

Yu

Zhejiang University

China

471

Dr.

Haoping

Yu

Huawei Technologies USA

United States

472

Prof.

Lu

Yu

Zhejiang University

China

473

Dr.

Xiang

Yu

Research In Motion Ltd.

Canada

474

Mr.

Yong

Yu

Broadcom

United States

475

PhD.

Yuan

Yuan

Tsinghua University

China

476

Mr.

Peiyu

Yue

Huawei Software Technologies Co., Ltd

China

477

Mr.

Harrison Hongseo

Yun

SK Telecom

South Korea

478

Mr.

Kugjin

Yun

ETRI

South Korea

479

Dr.

Tomasz

Zernicki

Telcordia Poland

Poland

480

Mr.

Wen

Zhang

ZTE

China

481

Dr.

Yongbing

Zhang

TSINGHUA UNIVERSITY

China

482

Ms.

Dan

Zhao

Panasonic Singapore laboratories Pte Ltd

Singapore

483

Mr.

Yu

Zhao

ZTE corporation

China

484

Mr.

Jianhua

Zheng

Huawei

China

485

Mr.

Xiaozhen

Zheng

Huawei Technologies Co., Ltd.

China

486

Mr.

Yunfei

Zheng

Qualcomm

United States

487

Dr.

Minhua

Zhou

Texas Instruments Inc

United States

488

Dr.

Xiaosong

Zhou

Apple Inc.

United States

489

Mr.

Hongbo

Zhu

None

China

490

Dr.

Yongwei

Zhu

Institute for Infocomm Research

Singapore

491

Mr.

Waqar

Zia

LG Electronics

Germany

492

Mr.

Bill

Zou

DTS

United States




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