3.2.1 Establish specific CMP engineering parameters and IPs
According to the “Invention Principles and Contradiction Matrix for Semiconductor Manufacturing Industry: Chemical Mechanical Polishing” established by Sheu et al. (2010), this paper refines engineering parameters to suit the CMP processing and equipment, and adds seven new engineering parameters as well as three new and two modified IPs.
3.2.2 Review patent summary
The multiple-to-multiple parameter correspondence is used as the basis for reviewing patent summaries to retrieve and read patent data. The sources of patents are R.O.C Patent Database, Patent Full-Text and Full-Page Image Databases, and the U.S. Patent Database. Each patent is formatted as a PSCA after the review of patent summary.