Name: (Dr.) C. D. Lokhande



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Materials Chemistry and Physics, (Submitted) 2000

164

Studies on deposition of antimony triselenide thin films by chemical method (SILAR)

B. R. Sankapal and C. D. Lokhande



Indian Journal of Pure Applied Physics, 38 (2000) 606-610

165

Structural, Optical and Electrical Properties of (CdS)x (Bi2S3) 1-x thin films deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method.

R. R. Ahire, B. R. Sankapal and C. D. Lokhande



Materials Research Bulletin, ( Submitted) (2000)

166

Preparation and characterization of lanthanum sulfide thin films deposited by spray pyrolysis techniques

G. D. Bagade , V. S. Yermune and C. D. Lokhande



Indian Journal Engineering Materials Science, 7 (2000) 390 –94

167

Photoelectrochemical cell based on chemically deposited nanocrystalline Sb2S3 thin films

R. S. Mane, B. R. Sankapal and C. D. Lokhande



Materials Chemistry and Physics, (Submitted) 2000

168

Preparation and characterization of Nickel Sulfide thin films deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method.

S. D. Sartale and C. D. Lokhande



Materials Chemistry and Physics, 72 (2001) 101-104

169

Studies on chemically deposited Sb2Se3 thin films

B. R. Sankapal and C. D. Lokhande,



Mater. Chem. Phys., (Submitted) 2000

170

Photoelectrochemical behavior of SILAR deposited Bi2Se3 thin films

B. R. Sankapal and C. D. Lokhande



Solar Energy Materials and Solar Cells, (submitted) 2000.

171

PEC studies on multilayer Bi2Se3-Sb2Se3 thin films grown by SILAR technique,

B. R. Sankapal and C. D. Lokhande



Solar Energy Materials and Solar Cells, 69 (2001) 43 – 52

172

Photoelectrochemical investigation of chemically deposited Bi2Se3-Sb2Se3 composite thin films

B. R. Sankapal and C. D. Lokhande,



Indian Journal of Pure Applied Physics, 38 (2000) 664

173

Studies on thin films deposited by SILAR Method from non-aqueous medium

B. R. Sankapal, R. S. Mane, and C. D. Lokhande,



Proc. IWPSD-99, New Delhi, 1428-1430

174

CuxS thin film formation using successive ionic layer adsorption and reaction (SILAR) method

S. D. Sartale and C. D. Lokhande



Materials Chemistry and Physics, 65 (2000) 63-67

175

Preparation and characterization of As2S3 thin films deposited using successive layer adsorption and reaction (SILAR) method,

S. D. Sartale and C. D. Lokhande



Materials Research Bulletin, 35 (2000) 1345-1353

176

Preparation and characterization of HgS films

S. S. Kale and C. D. Lokhande



Materials Chemistry and Physics, 62 (2000) 103-108

177

Photoelectrochemical (PEC) cell based on chemically deposited nanocrystalline, Bi2Se3-Sb2-Se3 composite thin films

B. R. Sankapal and C. D. Lokhande



Indian Journal of Pure Applied Physics, 38 (2000) 664-669.

178

Electrosynthesis of CdTe films from ethylene glycol bath

S. J. Lade, M. D. Uplane and C. D. Lokhande



Materials Chemistry and Physics, 63 (2000) 99-103.

179

Deposition of cobalt sulfide thin films by successive ionic layer adsorption and reaction (SILAR) method, and their characterization

S. D. Sartale and C. D. Lokhande



Indian Journal of Pure Applied Physics, 38 (2000) 48-52.

180

Room temperature chemical bath deposition of Sb2Se3 thin films from alkaline medium

B. R. Sankapal and C. D. Lokhande



Indian Journal of Physics A, 75 (2001) 143

181

Effect of annealing on electrosynthesized CuFe2O4 thin films

S. D. Sartale, H.M. Pathan and C. D. Lokhande



Proc. 43rd DAE-SSP symposium, 27-31 Dec., 43 (2000) 314-315

182

Spray pyrolysed lanthanum sulphide thin films

G. D. Bagde, S, D. Sartale, B. R. Sankapal and C. D. Lokhande



Proc. 43rd DAE-SSP symposium, 27-31 Dec., 43 (2000) 540-541.

183

Room temperature preparation of NiFe2O4 thin films by electrochemical route

S. D. Sartale and C. D. Lokhande


Indian Journal of Engineering Materials Science, 7 (2000) 404 –410





2001

184

Electrochemically deposition and oxidation of CuFe2 alloy thin films: a new method to deposit CuFe2O4 thin films


S. D. Sartale and C. D. Lokhande

Materials Chemistry and Physics, 70 (2001) 274-284

185

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