Name: (Dr.) C. D. Lokhande

Preparation and characterisation of nickel sulphide thin films using SILAR Method

S D Sartale and C. D. Lokhande

Materials Chemistry and Physics, 72 (2001) 101-104

195	Studies on photoelectrochemical cell formed with SILAR grown Bi2Se3-Sb2Se3 multilayer thin films B. R. Sankapal and C. D. Lokhande Solar Energy Materials and Solar Cells, 69 (2001) 43-52
196	Photoelectrochemical investigation of Ag2S thin films deposited by successive ionic layer adsorption and reaction (SILAR) method. H. M. Pathan, P. V. Salunkhe, B. R. Sankapal and C. D. Lokhande Materials Chemistry and Physics, 72 (2001) 105-108
197	Effect of annealing on the structural and optical properties of SILAR grown CuxS thin films S. D. Sartale and C. D. Lokhande Indian Journal of Physics, A 75 (2001) 375-378
198	Effect of Cd:S ratio on photoconducting properties on chemically deposited CdS films U. S. Jadhav, S. S. kale and, C. D. Lokhande Materials Chemistry and Physics, 69 (2001) 125 – 132
199	Effect of annealing on electrical properties of electrosynthesized CuFe2O4 thin films, S. D. Sartale, S. A. Patil and C. D. Lokhande, Proc. Int. workshop Prep. and Charact. Tech. Imp. Single Crystals, 26-28, Feb. 2001, New Delhi p.503-507
200