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POLUVODIČKI MATERIJALI ZA OPTOELEKTRONIKU

SEMICONDUCTOR MATERIALS FOR OPTOELECTRONICS
Voditelj projekta: dr. sc. Branko Šantić

Tel. ++385 1 4571 278   e-mail: santic@irb.hr



Suradnici
Branko Šantić, doktor fiz. znanosti, viši znanstveni suradnik

Program rada i rezultati na projektu:

Istraživani su materijali koji se primjenjuju u optoelektronici, i to posebice tzv. nitridni poluvodiči  (GaN, AlxIn1-xN, InxGa1-xN). Nastavljeno je proučavanje električnog transporta u tankim nitridnim filmovima. I dalje je aktualan važan problem p-tipa dopiranja jer je magnezij jedini plauzibilan akceptorski dopand. Stoga je proučavanje svojstava Mg-akceptora od iznimne važnosti za primjene. Pristupilo se novom i detaljnom modeliranju statističkih svojstava Mg- akceptora, i to u modelu vrpce što nije standardan pristup problemu. Preliminarni rezultati pokazuju da jedino energetska vrpca a ne izolirani energetski nivo mogu objasniti raspršenost literaturnih podataka za dubinu nivoa te razlike u uspješnosti dopiranja. Nadalje, nastavljeno je proučavanje spektara katodo-luminescencije (CL) na magnezijem dopiranim nitridima, te su ti rezultati korelirani s rezultatima električnih mjerenja i sa statističkim modelima. Otpočela su ispitivanja slojeva aluminij nitrida i galij nitrida jako dopiranih silicijem ili magnezijem pomoću metoda ERDA (Elastic Recoil Detection Analysis) i TOF (Time of Flight), u nastojanju da se odrede količine i raspodjele dopanada, te opaze i identificiraju slojevi s eventualno povećanom koncentracijom i grozdovima dopanata. Proučavana su optička svojstva tankih filmova nitrida na safiru s ciljem određivanja promjene širine energetskog procjepa uslijed intenzivnog dopiranja.



Research programme and results:

The semiconductors of interest for applications in optoelectronics have been studied. Particular attention is concentrated on the nitride semiconductors (GaN, AlN, InGaN). Studies of the electrical transport in thin films is continued. Particularly important is the p-type doping since the magnesium is the only functional dopand. A new model is devised to explain the statistical properties of the Mg-acceptor. We use the model of the band of the states which is not a standard approach. Preliminary results show that only the band model can explain the wide scattering of the literature data for the Mg-ionization energy and the various degrees of activations. Further, the cathode-luminescence (CL) spectra of GaN doped with magnesium have been studied, and these results are correlated with the electrical measurements and statistical models. We have initiated the ERDA (Elastic Recoil Detection Analysis) i TOF (Time of Flight) studies of aluminum nitride (AlN) and GaN heavily doped with silicon or magnesium in order to evaluate the distribution of dopands and eventually detect the layer of the increased dopant concentrations. Optical properties of the nitride films have been measured and correlated to the shrinkage of the energy gap.





PRILOZI
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