Progress report

Journal IET Communications, UK, (Accepted for publication, Mar. 2008).

8.	Bratati Mukhopadhyay, Abhijit Biswas, P. K. Basu, G. Eneman, P Verheyen, E Simoen and C Claeys	Modelling of threshold voltage and subthreshold slope of strained Si MOSFETs including quantum effects, Semicond. Sc. Technol., 23, 095017 (8 pp) (2008).
9.	Swagata Bhattacherjee and Abhijit Biswas	Modeling of threshold voltage and subthreshold slope of nanoscale DG MOSFETs, Semiconductor Science and Technology (U. K),vol. 23, p. 015010 (8 pp.), 2008
10.	S. Bhattacherjeeand A. Biswas	Estimation of threshold voltage and subthreshold slope of extremely scaled DG MOSFETs