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Proc. of National Symposium
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səhifə | 60/87 | tarix | 02.01.2022 | ölçüsü | 1,12 Mb. | | #27603 |
| Proc. of National Symposium, held in Jodhpur, India
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S. Banerjee and
J. P. Banerjee
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Effect of punch through on the breakdown characteristics of 4H-SiC IMPATT Diode
Proc. of International Symposium Microwave 2008, held in Jaipur, India
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24
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A. Das, M. Mukherjee, P. Bhattacharyya, N. C. Mondal, M. K. Pandit, J. P. Banerjee and
S. K. Roy
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Direct optical injection locking of a Ka-band Si SDR IMPATT diode for low phase noise
Proc. of International symposium ISM 2008, held in Bangalore, India
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25
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M. Mukherjee, N. C. Mondal, P. Bhattacharyya,
J. P. Banerjee and
S. K. Roy
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Effect of LASER radiation on Si (100) p-n junction : Simulation studies and experimental realization
Proc. of International symposium ISM 2008, held in Bangalore, India
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M. Mukherjee, J. Mukherjee,
J. P. Banerjee and
S. K. Roy
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Effect of photo-illumination on Millimeterwave properties of InP based IMPATT diodes at elevated temperature
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