| The Conductıvıty Properties Of Tlbi(Se1 Xsx)2 Crystal
For the present fast progress of technology the use of semiconductors in electronic industry has played an impotrant role. The interesting physical properties like high conductivity, thermoelectric power, photosensitivity of layered single crystals, such as TlBiX2 (X = Se, S), have made possible their use in the production of photo-cells, thermo-electric equipments, opto-acoustic detectors, IR detectors and circuit elements. The physical properties of these materials with such a wide application field have aroused much interest in these materials.
In this work, we tried to put forth the characteristic behavior of TlBi(Se1xSx)2 crystal in the high temperature range (293-413 K range) by studying the perpendicular conductivity to the growth axis and the thermoelectric properties depending on x concentration (mole fraction of S).
ULUTÜRK Melek ,
Danışman : Prof.Dr. M. Nizamettin ERDURAN
Anabilim Dalı : Fizik
Programı : Nükleer Fizik
Mezuniyet Yılı : 2006
Tez Savunma Jürisi : Prof.Dr. M. Nizamettin ERDURAN (Danışman)
: Prof. Dr. Ali GİRGİN
:Prof. Dr. Melih BOSTAN
:Prof. Dr. Ali TUTAY
:Prof. Dr. Engin IŞIKSAL
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