By Modulation Spectroscopy In these studies, various dilute bismuth and nitrogen containing samples were investigated by modulation spectroscopy. Photoreflectance and contactless electroreflectance results were analyzed depending on bulk, doped and undoped quantum well structures. The experimental results show that modulation spectroscopy can be used to characterize simple bulk and complex device structures.
Optical transition line shape of semiconductor structures in the modulation spectra was investigated using under different approaches. Optical transition energy determined from modulation spectrum analysis was compared with photo-luminescence optical transition energy and interpreted. Also, built-in electric field was determined Franz-Keldysh oscillation analysis in modulation spectrum.
