"Preliminary results for the realization of light emitters on silicon substrate"

liste 2008
CONFERENCES
1 I. Alghoraibi, T. Rohel, R. Piron, N. Bertru, C. Paranthoen, G. Elias, A. Nakkar, H. Folliot, A. Le Corre and S. Loualiche

"Negative Characteristic Temperature of Long Wavelength InAs/AlGaInAs Quantum Dot Laser Grown on InP Substrates"

Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on, Damascus, Syria, 7-11 avril 2008 2008
2 I. Alghoraibi, T. Rohel, R. Piron, N. Bertru, C. Paranthoën, G. Elias, A. Nakkar, H. Folliot, A. Le Corre and S. Loualiche

"Temperature Dependence of Threshold Current of InAs/AlGaInAs/InP Quantum Dot Laser "

SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, France, (poster) 7-8 july 2008
3 A. Bondi, W. Guo, L. Pedesseau, S. Boyer-Richard, H. Folliot, C. Cornet, C. Labbé, A. Le Corre, J. Even, A. Moréac and S. Loualiche

"Preliminary results for the realization of light emitters on silicon substrate"

SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, France, (poster) 7-8 july 2008
4 J.-P. Burin, N. Nasser, S. Boyer-Richard, N. Chevalier and K. Tavernier

"Assymetric Stark shift in InAs/GaInAsP(Q1.18) quantum dots grown on (113)B InP substrate"

SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, France, (poster) 7-8 july 2008
5 F. Doré, C. Labbé, H. Folliot, A. Nakkar, C. Paranthoën, N. Chevalier, K. Tavernier, J. Even, S. Loualiche, D. Lagarde, A. Balocchi and X. Marie

"Effect of the lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dots"

International conference on Indium Phosphide and Related Materials (IPRM), Versailles, Paris, 26-29 mai 2008
6 G. Elias, N. Bertru, A. Le Corre, A. Letoublon, I. Alghoraibi, A. Nakkar, N. Chevalier, H. Folliot and S. Loualiche

"Epitaxie des boites quantiques hautes performances InAs/InGaAsP/InP(100) pour des applications laser"

Journée nanosciences de bretagne (JNB2), Nantes, France, (oral) 5 june 2008
7 G. Elias, A. Letoublon, N. Bertru, A. Le Corre, I. Alghoraibi, A. Nakkar, N. Chevalier and S. Loualiche

"Self-organized growth of InAs quantum dots on InP(001)"

SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, France, (oral) 7-8 july 2008
8 J. Even, L. Pedesseau, A. Bondi, S. Boyer-Richard, P. Blaise and P. Y. Prodhomme

"Electronic properties of III-V nanostructures and materials for optoelectronic devices on silicon "

SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, France, (poster) 7-8 july 2008
9 J. Even, L. Pedesseau, F. Doré and S. Boyer-Richard

"Columnar quantum dots (QD) in polarization insensitive SOA and non-radiative Auger processes in QD: a theoretical study"

NUSOD, Numerical Simulation of Optoelectronic devices, Nottingham, UK, (oral) 1-5 september 2008
10 M. Gicquel-Guézo, H. Nong, C. Labbé, A. Moréac and S. Loualiche

"Highlighting excitonic optical properties of bundled carbon nanotubes to tailor novel nanomaterials-based devices"

TNT Trends in Nanotechnology, Oviedo, Espagne, (poster) 1-5 septembre 2008
11 W. Guo, A. Bondi, B. Alsahwa, C. Cornet, A. Letoublon, N. Chevalier, H. Folliot, A. Le Corre, J. Even and S. Loualiche

"Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate"

SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, France, (poster) 7-8 july 2008
12 W. Guo, A. Bondi, B. Alsahwa, C. Cornet, A. Letoublon, N. Chevalier, H. Folliot, A. Le Corre, J. Even and S. Loualiche

"Growth of InAs and InP nanostructure on GaP substrate for Photonics on Silicon"

Trends in Nanotechnology (TNT), Oviedo, Espagne, (poster) 1-5 September 2008
13 W. Guo, A. Bondi, H. Folliot, C. Cornet, A. Letoublon, O. Dehaese, A. Le Corre, O. Durand, J. Even and S. Loualiche

"Croissance par MBE de Boites quantiques InP sur GaP/Si"

2èmes Journées Nanosciences de Bretagne (JNB2), Nantes, France, (poster) 5-6 juin 2008
14 W. Guo, A. Letoublon, A. Bondi, C. Cornet, J. Even, O. Durand, A. Le Corre and S. Loualiche

"Growth and characterization of single phase GaP on Si(001)"

Colloque de l’Association Française de Cristallographie, Rennes, France, (poster) 7-10 july 2008
15 C. Labbé, A. Nakkar, F. Doré, H. Folliot, A. Letoublon, C. Paranthoën, J. Even, S. Loualiche, D. Lagarde, A. Balocchi and X. Marie

"Effect of lateral coupling on the carrier redistribution in InAs/InP(311)B high dots surface density"

SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, France, (poster) 7-8 july 2008
16 J.-M. Lamy, C. Paranthoën, C. Levallois, S. Boyer-Richard, H. Folliot, N. Chevalier, A. Le Corre and S. Loualiche

"Design of InGaAs/InP 1.55μm vertical cavity surface emitting lasers"

NUSOD, Numerical Simulation of Optoelectronic devices, Nottingham, UK, (oral) 1-5 september 2008
17 H. Nong, M. Seck, M. Gicquel-Guézo, C. Labbé, C. Paranthoën and S. Loualiche

"Structures à nanotubes de carbone pour les applications télécoms"

JNB Journées nanosciences de Bretagne, Nantes, (poster) 5-6 juin 2008
18 R. Piron, D. Zhou, M. Dontabactouny, O. Dehaese, T. Batte, K. Tavernier, F. Grillot, A. Le Corre and S. Loualiche

"1.55μm Room-Temperature Continuous Wave Operation of InAs/InP (100) Quantum Dash Ridge Lasers"

SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, france, (poster) 7-8 july 2008
19 S. Richard, J.-P. Burin, C. Labbé, C. Cornet, H. Folliot, C. Paranthoën, A. Nakkar, T. Rohel, F. Thoumyre, K. Tavernier and S. Loualiche

"Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots"

International conference on Indium Phosphide and Related Materials Conference Versailles, France, 26-29 mai 2008
20 D. Zhou, R. Piron, M. Dontabactouny, E. Homeyer, O. Dehaese, T. Batte, F. Grillot, K. Tavernier, J. Even and S. Loualiche

"Quantum Dash and Quantum Dot lasers on InP for 1.55 µm optical telecommunications: effect of stack numbers on threshold current density"

SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, France, (oral) 7-8 july 2008

Articles de journaux
21 I. Alghoraibi, T. Rohel, R. Piron, N. Bertru, C. Paranthoen, G. Elias, A. Nakkar, H. Folliot, A. Le Corre and S. Loualiche

"Negative Characteristic Temperature of Long Wavelength InAs/AlGaInAs Quantum Dot Laser Grown on InP Substrates"

IEEE Conference proceeding, 1-5 (2008)
22 F. Doré, C. Labbé, H. Folliot, A. Nakkar, C. Paranthoën, N. Chevalier, K. Tavernier, J. Even, S. Loualiche, D. Lagarde, A. Balocchi and X. Marie

"Evidence of lateral coupling on the carrier dynamics

in InAs/InP(311)B quantum dots"

Indium Phosphide and Related Materials Proceedings, (2008)
23 A. Nakkar, H. Folliot, A. Le Corre, F. Doré, I. Alghoraibi, C. Labbé, G. Ellias, S. Loualiche, M.-E. Pistol, P. Caroff and C. Ellström

"Optical properties and morphology of InAs/InP(113)B surface quantum dots"

Applied Physics Letters, 92, 23, 231911 (2008)
24 L. Pedesseau, C. Cornet, F. Doré, J. Even, A. Schliwa and D. Bimberg

"From k.p to atomic calculations applied to semiconductor heterostructures"

Journal of Physics: Conference Series, 107, 012009 (2008)
25 S. Richard, J.-P. Burin, C. Labbé, C. Cornet, H. Folliot, C. Paranthoën, A. Nakkar, T. Rohel, F. Thoumyre, K. Tavernier and S. Loualiche

"Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots "

Indium Phosphide and Related Materials Proceedings (IEEE), (2008)
26 K. Veselinov, F. Grillot, M. Gioannini, I. Montrosset, E. Homeyer, R. Piron, J. Even, A. Bekiarski and S. Loualiche

"Lasing spectra of 1.55 μm InAs/InP quantum dot lasers:theoretical analysis and comparison with the experiments"

Optical Quantum Electronics, (2008)