2011 YÜksek lisans tez özetleri

Electrical Properties Of Thallium Antimony Disulfide (TlSbS₂) Thin Films

Nowadays when technology improves rapidly, semiconductor materials play important role in electronic industry. Because of the importance of these materials, the dielectrical properties of these materials were investigated.

By the way of this purpose of investigation, we prepared samples as Al//Al form. Prepared samples were investigated within 25 Hz – 1 kHz frequency range, within 250 - 6000 thickness range and within 293 ⁰K – 373 ⁰K temperature range to determine capacitive behaviour, electric dissipation and alternative field conductivity of these materials. According to obtained results, it is thought within low frequency region a polarization mechanism that occurs in long relaxation time range. As frequency increases, other polarization mechanisms may be effective in structure.

It was observed that the relation between alternative conductivity and applied frequency obeys equation. It was determined that n coefficient values are between 0,6 - 0,8 and these values are depend on temperature. It was concluded that polarization mechanism in structure depended on temperature.