Size Effect of InAs/InP Self–Organized Quantum Dots on Optical Properties A. Nouri1, M. Bouslama 2, F. Saidi3, H. Maaref4, M. Gendry5
1 University of Bechar, Faculty of Sciences and Technology, BP 417 Bechar, Algeria
1,2Laboratoire Matériaux, Ecole Polytechnique, Oran BP 1523 El -M’naouer Oran, Algeria
3,4Laboratoire LMON, Bd de l’Environnement 5019 Monastir, Tunisia
5 (INL), INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne, France
Email: nouri_32@ yahoo.fr Quantum dots (QDs) are widely studied for their quantum confinement effects to improve optical properties; there are a relationship between the QDs size and the emission wavelength. In this study we show the effect of variation of many parameters like power and QDs size on the shape and the shift of photoluminescence spectra. Self-organized InAs quantum dots are grown on 3,1% InP(110) lattice mismatched substrate using Solid Source Molecular Beam Epitaxy (SSMBE). Stranski-Krastanov mode growth was used to create self-assembled 3D islands on InAs wetting layer (WL). A density InAs QDs of less than 109 cm-2 was obtained. Moreover, Atomic Force Microscopy (AFM) images shows inhomogeneous island dots size distribution depending on the temperature of coalescence. The optical quality and the quantum size effect of the InAs Qds depending on the laser power was demonstrated using photoluminescence spectroscopy (PL).
Keywords: AFM, InAs QDs, PL, SSMBE.
