Israel state records י"ג בשבט התשס"ח January 20, 2008


חיישן DNA המבוסס על נגד מוליך למחצההנשלט ע"י מולקולות



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חיישן DNA המבוסס על נגד מוליך למחצההנשלט ע"י מולקולות


DNA DETECTOR BASED ON MOLECULAR CONTROLLED SEMICONDUCTOR RESISTOR


[54]




07.06.2000

[22]




IL

[33]

07.06.1999

[32]

130326

[31]

Int. Cl.8 C12N 001/00, C12Q 001/68

[51]

ידע חברה למחקר ופיתוח בע"מ, רחובות

YEDA RESEARCH AND DEVELOPMENT CO. LTD.

[71]

דוד כאהן, רון נעמן, רעית ארצי

DAVID CAHEN, RON NAAMAN, REIT ARTZI

[72]




WO/2000/075276

[87]

פאולינה בן-עמי , בן עמי ושות',

ת.ד. 94, רחובות



PAULINA BEN-AMI, BEN-AMI & ASSOCIATES,

P.O.B. 94,

REHOVOT 76100


[74]




[57] A semiconductor device composed of one or more insulating or semiinsulating layers (1), one conducting semiconductor layer (2), two conducting pads (3), and a layer of at least one single-stranded DNA probe (4), wherein: said conducting semiconductor layer is on top of one of said insulating or semi-insulating layers, said two conducting pads are on both sides on top of an upper layer which is either said conducting semiconductor layer or another of said insulating or semi-insulating layers, making electrical contact with said conducting semiconductor layer, and said layer of at least one one single-stranded DNA probe is directly adsorbed on the surface of said upper layer, between the two conducting pads, wherein exposure of said single-stranded DNA probe to a sample containing a target DNA or RNA, under hybridization conditions, causes either a current change resulting from the hybridization process when a constant electric potential is applied between the two conducting pads or a change in the electric potential required to keep a constant current.

__________




147616

[21][11]


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