A.Ghosal
and K.Sarkar
|
Drain Current vs. Drain Voltage characteristics of nanoscale 2D GaAs MOSFETs (NEP-8541).
|
11.
|
A.Banerjee, S.Mukhopadhyay and A.Ghosal
|
Calculation of gain in GaAlAs/GaAs superlattice laser due to intersubband longitudinal optic (lo) phonon transitions (OLT-1359).
|
12.
|
S. Bhattacherjee, A. Biswas and P. K. Basu
| Influence of gate architectures on the performance of SOI MOSFETs including the strained channel (EDM-8763) |
13.
|
Bratati Mukhopadhyay. Gopa Sen and P.K.Basu
|
Feasibility of Laser Action at 1550 nm by Direct Gap Type I GeC/GeSiSn Heterojunctions (EDM-6788)
|
14.
|
Gopa Sen, Bratati Mukhopadhyay and P.K.Basu
|
Ge/SiGe RCE Photodetectors : A comparative study based on Franz-Keldysh Effect and Quantum Confined Stark Effect (EDM -8272).
|
15.
|
Rikmantra Basu, Bratati Mkhopadhyay and P. K. Basu
|
Gain Spectra and Characteristics of a Transistor Laser with InGaAs Quantum Well in the Base (OLT-6708).
|
16.
|
Vedatrayee Chakraborty, Bratati Mukhopadhyay and P.K.Basu
|
A compact drift-diffusion current model of strained-Si-Si1-xGex MOSFETs (EDM-5197).
|
17.
|
Santu Sarkar and N. R. Das
| |
