2011 YÜksek lisans tez özetleri

Positively Charged Ion Diffusion İn P Type Silicon
This work intends to look into the behavior of positively charged impurities in boron doped silicon and calculate the intrinsic diffusion coefficient of this impurity in this semiconductor. The experiments to be conducted within the scope of this project will use "Schottky" diodes fabricated on by high purity copper or iron diffused p-type silicon samples. Identification of the behavior of copper or similar impurities in semiconductors is technologically important as the defects caused by these impurities change the free carrier behavior and interfere with proper operation of semi-conductor devices, leading to overheating and malfunction. Following positive ion doping, a significant fall in the majority carrier concentration of silicon will be observed, which can be determined by C-V (profiling) method. Doped ions will drift within silicon towards the edge of the depletion region as a result of being exposed to the electrical field applied externally. The diffusion coefficient can be determined through an analysis of capacity changes (transients) caused by these travelling ionic charges. Such an experiment will be performed via TID (transient ion drift) method. The experimental settings required to employ these methods (the proper measurement systems and software to analyze the data obtained by these measurements) will be designed by the graduate student who has prepared this project. Construction of the measurement system, capable of conducting C-V and TID measurements, will be the starting point of this thesis.

ŞAHİN Yavuz

Danışman : Yrd Doç. Dr. Hulusi Kemal ULUTAŞ

Anabilim Dalı : Fizik

Programı : Genel Fizik

Mezuniyet Yılı : 2011

Tez Savunma Jürisi : Yrd. Doç. Dr. H. Kemal ULUTAŞ

Prof. Dr. Nurten ÖNCAN

Doç. Dr. Nevin KALKAN

Doç. Dr. Hüseyin DELİGÖZ

Yrd. Doç. Dr. Saffettin YILDIRIM