Progress report



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Abhirup Das Barman, Ipsita Sengupta and

P K Basu

Circuit model for static and dynamic analysis of SOA

5

S Dasguprta and Abhirup Das Barman

Design of narrow band DWDM channel de-multiplexer for fibre Bragg grating

6

Santu Sarkar, N R Das, and M K Das

Analysis of component cross-talk and obtaining bit-error-rate in a WDM receiver

7

Gopa Sen, Bratati Mukhopadhyay and P K Basu

Modeling electroabsorption and electro refraction in Ge/SiGe multiple quantum wells for application as modulators

8

Sumitra Ghosh

and P K Basu



Calculated composition of Ge1-zCz/Ge1-x-ySixSnyheterostructures grown on Si for direct gap emission from Ge1-zCz at 1.55 μm.

9

Subindu Kumar, Sanjib Kabi, Tapas Das and Dipankar Biswas

Curious changes in the photoluminescence of InGaN/GaN Quantum Wells explained







2nd National Conf. Advanced Optoelectronic Materials & Devices (AOMD),

IT-BHU, December 22-24, 2008.



10

P. K. Basu, S. Ghosh, Bratati Mukhopadhyay and Gopa Sen

Ge/SiGeSn multiple quantum well photonic devices, Proc. AOMD, Eds. S. Jit & P Chakraverti, McMillan , pp. 141-155.

11

Gopa Sen, Bratati Mukhopadhyay and P K Basu

Performance optimization of Ge/SiGe MQW-electrobsorption modulator for short optical pulse generation,(as above) pp. 94-101.

12

Tapas Das, Dipankar Biswas and Sanjib Kabi

A First Report on the Utility of the Full Width at Half Maximum of the Photoluminescence Spectrum From InxGa1-xN / GaN Quantum Wells

13

Sanjib Kabi, Subindu Kumar, Dipankar Biswas and Tapas Das

Further Support to the Large Band Gap 1.95 eV of InN








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