Progress report

Impact of high-k dielectrics and spacer layers on the elctrical performance of symmetrical double gate MOSFETs, pp. 39-42, 2009

53.	A. Biswas and M. Basak Nath	Influence of temperature on the threshold voltage and subthreshold slope of strained-Si/SiGe MOSFETs with polysilicon gates, pp. 43-46, 2009
54.	S. Goswami and A. Biswas	Modeling and numerical simulation of gate leakage current in strained-Si channel nMOSFETs with high-k gate dielectrics, pp. 35-38, 2009
55.	N.R.Das	Si-based Photodetector in Optical Communication, , pp.446-451, 2009.
56.	Kasturi Mukherjee and N. R. Das	Effect of Barrier Asymmetry on Tunneling Current in Double Barrier Quantum Well Structure, pp.468-471, 2009.
57.	Himadri Sekhar Dutta and N. R. Das	Calculating the NoiseEquvalent Bandwidth of a Ge-based Schottky photodetector at1.55 μm wavelength, pp.490-493, 2009
58.