Israel state records י"ג בשבט התשס"ח January 20, 2008

תפס אלקטרוסטטי קרמי ושיטת ייצור	CERAMIC ELECTROSTATIC CHUCK ASSEMBLY AND METHOD OF MAKING
[54]
	10.06.2002					[22]
	US	[33]	28.06.2001	[32]	892634	[31]
Int. Cl.8 H01L 021/68						[51]
			LAM RESEARCH CORPORATION, U.S.A.			[71]
	WO/2003/003449					[87]
ריינהולד כהן ושותפיו, רחוב אחד העם 21 , ת.ד. 4060, תל אביב			REINHOLD COHN AND PARTNERS, 21 AHAD HA'AM ST., P.O.B. 4060, TEL AVIV 61040			[74]

[57] A sintered ceramic electrostatic chucking device, comprising: a substantially planar electrostatic clamping electrode (70) embedded in a joint-free monolithic sintered ceramic body (74), the clamping electrode including at least one pattern of an electrically conductive material; wherein the maximum straight line length in the electrode pattern is 1.0 inch.

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159599			[21][11]
תרכובות אמיניות והרכבים הניתנים לגיפור המיתקבלים מהן			AMINE COMPOUNDS AND CURABLE COMPOSITIONS DERIVED THEREFROM			[54]
	11.06.2002					[22]
	US	[33]	29.06.2001	[32]	09/896082	[31]
Int. Cl.8 C07F 007/10, C08G 059/30, 077/26, C09D 183/08						[51]
			VIRGINIA TECH INTELLECTUAL PROPERTIES, INC, U.S.A.			[71]
	WO/2003/002057					[87]
ריינהולד כהן ושותפיו, רחוב אחד העם 21 , ת.ד. 4060, תל אביב			REINHOLD COHN AND PARTNERS, 21 AHAD HA'AM ST., P.O.B. 4060, TEL AVIV 61040			[74]

[57] A curable composition comprising:

(a) an amine compound produced by a process comprising the step of reacting an amine reactant with an epoxide reactant to form a carbon-nitrogen bond, wherein at least one of said amine reactant or epoxide reactant contains at least one terminal alkoxysilane group;

(b) water;

(c) a tetraalkoxysilane compound; and

(d) an alkyltrialkoxysilane compound.

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159680			[21][11]
ספק כוח דו–מצבי			DUAL MODE POWER SUPPLY			[54]
	02.07.2002					[22]
	US	[33]	03.07.2001	[32]	09/898680	[31]
Int. Cl.8 H02J 003/00						[51]
			QUALCOMM INCORPORATED, U.S.A.			[71]
	WO/2003/005528					[87]
סנפורד ט. קולב ושות', שער הגיא 4, מרמורק , ת.ד. 2273, רחובות			SANFORD T.COLB & CO., P.O.B. 2273, REHOVOT 76122			[74]

[57] A reduced-average-power electronic circuit comprising: a power source (112); a switch mode power supply (SMPS) (104) powered by the power source, the SMPS having a capacity which is lower than the maximum power requirement for the hereafter-recited load; a load (106), powered by the SMPS, having a requirement for varying amounts of power, the power having low noise during high power conditions and the load tolerating a low voltage during low power conditions; and means for applying power from the power source to the load without passing through the SMPS when the applied power is higher than a threshold, the threshold being lower than or equal to the capacity of the SMPS, wherein the means for applying power from the power source to the load without passing through the SMPS comprises a switch in parallel with the SMPS; wherein the switch is coupled to a controller (116) which is structured to close the switch when the applied power is higher than the threshold and to open the switch when the applied power is lower than the threshold; and wherein the controller further comprises a timer which is structured: to delay closing the switch, when the applied power is higher than the threshold, until a predetermined period of time has elapsed since the switch was last opened; or to delay opening the switch, when the applied power is lower than the threshold, until a predetermined period of time has elapsed since the switch was last closed; or both.

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159727			[21][11]
אריזות בעלות חלל–אויר המיועדות למכשירים אלקטרוניים ע"י שימוש בחומרים שונים			AIR-CAVITY PACKAGING OF ELECTRONIC DEVICES USING DIVERSE MATERIALS			[54]
	19.06.2002					[22]
	US	[33]	12.07.2001	[32]	904583	[31]
Int. Cl.8 H01L 021/44						[51]
			RJR POLYMERS, INC., U.S.A.			[71]
	WO/2003/007362					[87]
ריינהולד כהן ושותפיו, רחוב אחד העם 21 , ת.ד. 4060, תל אביב			REINHOLD COHN AND PARTNERS, 21 AHAD HA'AM ST., P.O.B. 4060, TEL AVIV 61040			[74]

[57] A process for encasing a semiconductor circuit device to form a sealed air-cavity package, said process comprising:

(a) soldering said semiconductor circuit device to a heat-conductive base at a temperature in excess of 250˚C;

(b) affixing a plastic frame of sidewalls over said heat-conductive base after the completion of step (a) by forming a seal between said side walls and said heat-conductive base at a temperature lower than 200˚C, thereby forming a partial enclosure around said semiconductor circuit device, said plastic frame or said heat-conductive base having been preformed with electrically conductive leads such that said leads penetrate said partial enclosure;

(c) electrically connecting the circuit of said semiconductor circuit device to said leads; and

(d) affixing a lid to said partial enclosure thereby encasing said semiconductor circuit device in a housing that is substantially impermeable to gases.

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159860			[21][11]