2011 YÜksek lisans tez özetleri

Investigation of Electrical Properties of Structures Including InAs/GaAs and GaSb/GaAs Quantum Dots

In this working, electrical properties of the samples which have including InAs/GaAs Quantum Dots and GaSb/GaAs Quantum Dots has been investigated.

Both of the samples have been grown by Moleculer Beam Epitaxy (MBE). Quantum Dots are embedded in depletion region of n⁺-p junction for on all of the samples.

For each one of the samples, the Current-Voltage (I-V), the Capacity-Voltage (C-V), the DLTS (Deep Level Transient Spectroscopy) and the Charge Selective DLTS measurements have been done, between 20K and 300K.

For the sample that includes InAs/GaAs Quantum Dots, the activation energy has been determined as 198 meV by the method of Charge Selective DLTS. For the sample that includes GaSb/GaAs Quantum Dots, the activation energy has been determined as 461 meV by the method of Charge Selective DLTS.

Furthermore, for both of the samples that include InAs/GaAs Quantum Dots and GaSb/GaAs Quantum Dots, the storage times have been determined as 0.5 ns and 1 μs respectively at room temperature.

A part of this work has been performed at the Technical University of Berlin, Institute of Solid State Physics.

PEHLİVAN Kübra

Danışman : Yard. Doç. Dr. Saffettin YILDIRIM

Anabilim Dalı : Fizik

Programı : Katıhal Fiziği

Mezuniyet Yılı : 2011

Tez Savunma Jürisi : Yard. Doç. Dr. Saffettin YILDIRIM

Prof. Dr. M. Çetin ARIKAN

Doç. Dr. Deniz Değer ULUTAŞ

Doç. Dr. Hüseyin DELİGÖZ

Doç. Dr. Gürkan ÇELEBİ